Improvement of the tunnel oxide quality by a low thermal budget dual oxidation for flash memories

IEEE Electron Device Letters

Volumn 18, Issue 8, 1997, Pages 385-387

  Kim, Jonghan ^a   Ahn, Sung Tae ^a  

^a SAMSUNG Electronics   (South Korea)

Author keywords

[No Author keywords available]

Indexed keywords

CHEMICAL BONDS; CURRENT DENSITY; GATES (TRANSISTOR); INDUCED CURRENTS; INTERFACES (MATERIALS); LEAKAGE CURRENTS; MOS DEVICES; SEMICONDUCTOR DEVICE MANUFACTURE; SURFACE ROUGHNESS; THERMOOXIDATION; ULTRATHIN FILMS;

FLASH MEMORIES; STRESS INDUCED LEAKAGE CURRENTS (SILC); TUNNEL OXIDES;

SEMICONDUCTOR STORAGE;

EID: 0031208717     PISSN: 07413106     EISSN: None     Source Type: Journal    
DOI: 10.1109/55.605447     Document Type: Article

References (9)

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