Corner-Rounded Shallow Trench Isolation ‘Technology to Reduce the Stress-Induced Tunnel Oxide Leakage Current for Highly Reliable Flash Memories

Technical Digest - International Electron Devices Meeting, IEDM

Volumn , Issue , 1996, Pages 833-836

  Vatanabe, Hiroshi ^a   Shimizu, Kazuhiro ^a   Takeuchi, Yuji ^a   Aritome, Seiichi ^a  

^a TOSHIBA CORPORATION   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

LEAKAGE CURRENTS; SEMICONDUCTOR STORAGE; CAPACITORS; CURRENT DENSITY; ELECTRIC FIELDS; ELECTRIC VARIABLES MEASUREMENT; OXIDES;

DATA-RETENTION; FLASH MEMORY CELL; ISOLATION TECHNOLOGY; KEY TECHNOLOGIES; ROUNDED CORNERS; STRESS-INDUCED; STRESS-INDUCED LEAKAGE CURRENT; SUBMICRON; TRENCH ISOLATION; TUNNEL OXIDES;

FLASH MEMORY; SEMICONDUCTOR DEVICE MANUFACTURE;

FLASH MEMORIES; FOWLER NORDHEIM CURRENT; SHALLOW TRENCH ISOLATION; STRESSED INDUCED LEAKAGE CURRENT; TUNNEL OXIDE;

EID: 0030422206     PISSN: 01631918     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/IEDM.1996.554109     Document Type: Conference Paper

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