Modeling of SILC based on electron and hole tunneling-part II: Steady-state

IEEE Transactions on Electron Devices

Volumn 47, Issue 6, 2000, Pages 1266-1272

  Lelmini, Daniele ^a   Spinelli, Alessandro S ^b   Rigamonti, Matteo A ^b   Lacaita, Andrea L ^c  

^a POLITECNICO DI MILANO   (Italy)

^b UNIVERSITY OF INSUBRIA   (Italy)

^c UNIVERSITY OF MILAN   (Italy)

Author keywords

Leakage currents; Mos devices; Semiconductor device modeling; Tunneling

Indexed keywords

ELECTRON HOLE RECOMBINATION; HOLE TUNNELING; SILICON BANDGAP; STRESS INDUCED LEAKAGE CURRENT; ULTRATHIN OXIDE;

COMPUTER SIMULATION; ELECTRON ENERGY LEVELS; ELECTRON TUNNELING; ENERGY GAP; HETEROJUNCTIONS; HOLE TRAPS; MOSFET DEVICES; OXIDES; SEMICONDUCTING SILICON;

LEAKAGE CURRENTS;

EID: 0033740567     PISSN: 00189383     EISSN: None     Source Type: Journal    
DOI: 10.1109/16.842972     Document Type: Article

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