Experimental analysis of gate oxide degradation - existence of neutral trap precursor, single and multiple trap-assisted-tunneling for SILC mechanism

Annual Proceedings - Reliability Physics (Symposium)

Volumn , Issue , 2000, Pages 65-71

  Yamada, Ren ichi ^a   Yugami, Jiro ^a   Ohkura, Makoto ^a  

^a HITACHI LTD   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

LEAKAGE CURRENTS; OXIDES;

FOWLER-NORDHEIM STRESSES; NEUTRAL TRAPS; STRESS-INDUCED LEAKAGE CURRENTS (SILC);

GATES (TRANSISTOR);

EID: 0033731019     PISSN: 00999512     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Article

References (13)