High performance deep-submicron n-MOSFETs by nitrogen implantation and in-situ HF vapor clean

Annual Proceedings - Reliability Physics (Symposium)

Volumn , Issue , 2000, Pages 180-185

  Chen, Jiann Heng ^a   Lei, Tan Fu ^a   Chen, Chia Lin ^b   Chao, Tien Sheng ^b   Wen, Wen Ying ^c   Chen, Kuag Ting ^c  

^a NATIONAL CHIAO TUNG UNIVERSITY   (Taiwan)

^b NATIONAL NANO DEVICE LABORATORIES   (Taiwan)

^c WINBOND ELECTRONICS CORPORATION   (Taiwan)

Author keywords

[No Author keywords available]

Indexed keywords

GATES (TRANSISTOR); HOT CARRIERS; HYDROGEN FUELS; ION IMPLANTATION; LEAKAGE CURRENTS; NITROGEN; SURFACE CLEANING; TRANSCONDUCTANCE; ULTRATHIN FILMS;

CHARGE PUMPING CURRENT; DRAIN CURRENT; GATE OXIDES;

MOSFET DEVICES;

EID: 0033750005     PISSN: 00999512     EISSN: None     Source Type: Journal    
DOI: 10.1109/RELPHY.2000.843911     Document Type: Article

References (0)