Atomic transport and chemical stability during annealing of ultrathin Al2O3 films on Si

Physical Review Letters

Volumn 85, Issue 19, 2000, Pages 4120-4123

  Krug, C ^a   Da Rosa, E B O ^a   De Almeida, R M C ^a   Morais, J ^a   Baumvol, I J R ^a   Salgado, T D M ^a   Stedile, F C ^a  

^a FEDERAL UNIVERSITY OF RIO GRANDE DO SUL   (Brazil)

Author keywords

[No Author keywords available]

Indexed keywords

ALUMINA; AMORPHOUS FILMS; CHEMICAL VAPOR DEPOSITION; DIFFUSION IN SOLIDS; OXIDATION; OXYGEN; RAPID THERMAL ANNEALING; SEMICONDUCTING SILICON; ULTRATHIN FILMS; VACUUM APPLICATIONS; X RAY PHOTOELECTRON SPECTROSCOPY;

ATOMIC LAYER CHEMICAL VAPOR DEPOSITION (ALCVD); CHEMICAL STABILITY;

SEMICONDUCTING FILMS;

EID: 14344277175     PISSN: 00319007     EISSN: None     Source Type: Journal    
DOI: 10.1103/PhysRevLett.85.4120     Document Type: Article

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