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Volumn 63, Issue 24, 2001, Pages

Strain relaxation in (0001) AlN/GaN heterostructures

Author keywords

[No Author keywords available]

Indexed keywords

ALUMINUM DERIVATIVE; GALLIUM; NITROGEN DERIVATIVE;

EID: 0034906466     PISSN: 10980121     EISSN: 1550235X     Source Type: Journal    
DOI: 10.1103/PhysRevB.63.245307     Document Type: Article
Times cited : (108)

References (67)
  • 12
    • 77953639704 scopus 로고    scopus 로고
    • Vol. 57 of Semiconductors and Semimetals (Academic
    • C. Kisielowski, in Gallium Nitride (GaN) II, edited by J. I. Pankove and T. D. Moustakas, Vol. 57 of Semiconductors and Semimetals (Academic, San Diego, 1999), p. 275.
    • San Diego , vol.1999 , pp. 275
    • Kisielowski, C.1


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.