Stress relaxation in Si-doped GaN studied by Raman spectroscopy

Journal of Applied Physics

Volumn 83, Issue 11, 1998, Pages 5787-5791

  Lee, In Hwan ^a   Choi, In Hoon ^a   Lee, Cheul Ro ^b   Shin, Eun Joo ^b   Kim, Dongho ^b   Noh, Sam Kyu ^b   Son, Sung Jin ^c   Lim, Ki Yong ^c   Lee, Hyung Jae ^c  

^a Korea University   (South Korea)

^b Korea Research Institute of Standards and Science   (South Korea)

^c Chonbuk National University   (South Korea)

Author keywords

[No Author keywords available]

Indexed keywords

DISLOCATIONS (CRYSTALS); ESTIMATION; METALLORGANIC VAPOR PHASE EPITAXY; NATURAL FREQUENCIES; RAMAN SPECTROSCOPY; RESIDUAL STRESSES; SEMICONDUCTING FILMS; SEMICONDUCTOR DOPING; SILICON; STRESS RELAXATION;

ELECTRON CONCENTRATION; FREQUENCY SHIFT; GALLIUM NITRIDE; PHONON FREQUENCY; RAMAN FREQUENCY;

SEMICONDUCTING GALLIUM COMPOUNDS;

EID: 0032094714     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.367501     Document Type: Article

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