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Volumn 60, Issue 3, 1999, Pages 1496-1499

Barrier-width dependence of group-III nitrides quantum-well transition energies

Author keywords

[No Author keywords available]

Indexed keywords


EID: 0001025332     PISSN: 10980121     EISSN: 1550235X     Source Type: Journal    
DOI: 10.1103/PhysRevB.60.1496     Document Type: Article
Times cited : (209)

References (23)
  • 7
    • 0009407846 scopus 로고    scopus 로고
    • Nitride Semiconductors
    • F. A. Ponce, S. P. Denbaars, B. K. Meyer, S. Nakamura, and S. Strite, Materials Research Society, Pittsburgh
    • J. S. Im, H. Kollmer, J. Off, A. Sohmer, F. Scholz, and A. Hangleiter, in Nitride Semiconductors, edited by F. A. Ponce, S. P. Denbaars, B. K. Meyer, S. Nakamura, and S. Strite, MRS Symposia Proceedings, No. 482 (Materials Research Society, Pittsburgh, 1998), p. 513.
    • (1998) MRS Symposia Proceedings , vol.482 , pp. 513
    • Im, J.S.1    Kollmer, H.2    Off, J.3    Sohmer, A.4    Scholz, F.5    Hangleiter, A.6
  • 20
    • 85039020375 scopus 로고    scopus 로고
    • private communication
    • P. Biegenwald (private communication).
    • Biegenwald, P.1
  • 23
    • 85038981560 scopus 로고    scopus 로고
    • private communication
    • F. Bernardini (private communication).
    • Bernardini, F.1


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.