High-frequency AlGaN/GaN polarization-induced high electron mobility transistors grown by plasma-assisted molecular-beam epitaxy

Applied Physics Letters

Volumn 75, Issue 23, 1999, Pages 3653-3655

  Murphy, M J ^a   Chu, K ^a   Wu, H ^a   Yeo, W ^a   Schaff, W J ^a   Ambacher, O ^a   Eastman, L F ^a   Eustis, T J ^a   Silcox, J ^a   Dimitrov, R ^b   Stutzmann, M ^b  

^a Department of Population Medicine and Diagnostic Sciences   (United States)

^b WALTER SCHOTTKY INSTITUT   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 0000789653     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.125418     Document Type: Article

References (9)

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