High-frequency AlGaN/GaN polarization-induced high electron mobility transistors grown by plasma-assisted molecular-beam epitaxy

Applied Physics Letters

Volumn 75, Issue 23, 1999, Pages 3653-3655

  Murphy, M J ^a   Chu, K ^a   Wu, H ^a   Yeo, W ^a   Schaff, W J ^a   Ambacher, O ^a   Eastman, L F ^a   Eustis, T J ^a   Silcox, J ^a   Dimitrov, R ^b   Stutzmann, M ^b  

^a Cornell University   (United States)

^b WALTER SCHOTTKY INSTITUT   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 0000789653     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.125418     Document Type: Article

References (9)

1. S. N. Mohammad and H. Morkoç, Prog. Quantum Electron. 20, 361 (1996).
2. Q. Chen, J. W. Yang, R. Gaska, M. Asif Khan, M. S. Shur, G. J. Sullivan, A. L. Sailor, J. A. Higgins, A. T. Ping, and I. Adesida, IEEE Electron Device Lett. 19, 44 (1998).
3. Y. F. Wu, B. P. Keller, P. Fini, S. Keller, T. J. Jenkins, L. T. Kehias, S. P. Denbaars, and U. K. Mishra, IEEE Electron Device Lett. 19, 50 (1998).
4. C. R. Elsass, I. P. Smorchkova, B. Heying, E. Haus, P. Fini, K. Maranowski, J. P. Ibbetson, S. Keller, P. M. Petroff, S. P. DenBaars, U. K. Mishra, and J. S. Speck, Appl. Phys. Lett. 74, 3528 (1999).
5. N. X. Nguyen, C. Nguyen, and D. E. Grider, Electron. Lett. 34, 811 (1998).
6. R. Dimitrov, A. Mitchell, L. Wittmer, O. Ambacher, M. Stutzmann, J. Hilsenheck, and W. Rieger, Jpn. J. Appl. Phys. (to be published).
7. M. J. Murphy, K. Chu, H. Wu, W. Yeo, W. J. Schaff, O. Ambacher, J. Smart, T. J. Eustis, J. R. Shealy, and L. F. Eastman, J. Vac. Sci. Technol. B 17, 1252 (1999).
8. O. Ambacher, J. Smart, J. R. Shealy, N. G. Weimann, K. Chu, M. Murphy, W. J. Schaff, and L. F. Eastman (unpublished).
9. K. K. Chu, J. A. Smart, J. R. Shealy, and L. F. Eastman, Proc. Electrochem. Soc. 98-12, 46 (1998).