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Applied Surface Science

Volumn 117-118, Issue , 1997, Pages 400-405

The properties of Schottky junctions on Nb-doped SrTiO 3 (001)

(4) Shimizu, Takashi a Gotoh, Naoki a,b Shinozaki, Naoya a,c Okushi, Hideyo a

a ELECTROTECHNICAL LABORATORY (Japan)

b TOKYO UNIVERSITY OF SCIENCE (Japan)

c TOKAI UNIVERSITY (Japan)

Author keywords

Ideality factor; Nb doped SrTiO 3; Ozone treatment; Schottky barrier height; Schottky Mott rule

Indexed keywords

CURRENT VOLTAGE CHARACTERISTICS; DEPOSITION; ELECTRODES; INTERFACES (MATERIALS); MESFET DEVICES; OZONE; SCHOTTKY BARRIER DIODES; SURFACE TREATMENT;

IDEALITY FACTORS; SCHOTTKY-MOTT RULE; STRONTIUM TITANATE;

STRONTIUM COMPOUNDS;

EID: 0031548247 PISSN: 01694332 EISSN: None Source Type: Journal
DOI: 10.1016/S0169-4332(97)80114-6 Document Type: Article

Times cited : (69)

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