High-dielectric constant thin films for dynamic random access memories (DRAM)

Annual Review of Materials Science

Volumn 28, Issue 1, 1998, Pages 79-100

  Scott, J F ^a,b  

^a MAX PLANCK INSTITUTE OF MICROSTRUCTURE PHYSICS   (Germany)

^b UNIVERSITY OF NEW SOUTH WALES   (Australia)

Author keywords

Capacitors; Ferroelectric; Oxide ferroelectrics; Perovskite structures

Indexed keywords

CAPACITORS; DEPOSITION; DYNAMIC RANDOM ACCESS STORAGE; ELECTRIC BREAKDOWN OF SOLIDS; ELECTRODES; FERROELECTRIC MATERIALS; INTERFACES (MATERIALS); LEAKAGE CURRENTS; OXIDES; PERMITTIVITY; PEROVSKITE; THIN FILM DEVICES;

AURIVILLIUS PHASE;

DIELECTRIC FILMS;

EID: 0031623825     PISSN: 00846600     EISSN: None     Source Type: Journal    
DOI: 10.1146/annurev.matsci.28.1.79     Document Type: Article

References (143)

1. Fazan PC. 1994. Integ. Ferroelec. 4:247
2. Gnade B, Summerfelt SR, Crenshaw D. 1995. In Science and Technology of Electroceramic Thin Films: NATO ASI Series, ed. O Auciello, R Waser, 284:373. Dordrecht: Kluwer
3. Kotecki DE. 1997. Integ. Ferroelec. 16: 1
4. Tasch AF, Parker LH. 1989. Proc. IEEE 77:374
5. Mochizuki Y. 1989. Nikkei Microdevices p, 54 (in Japanese)
6. Scott JF, AraujoCA. 1989. Science 246: 1400
7. Noma A, Ueda D. 1997. Integ. Ferroelec. 15:69
8. Mochizuki Y. 1993. Nikkei Microdevices p. 82 (in Japanese)
9. Scott JF. 1995. Phys. World p. 46
10. Lesaicherre P-Y, Yamaguchi H, Miyasaka Y, Watanabe H, Ono H, Yoshida M. 1995. Integ. Ferroelec. 8:201
11. Yamamichi S, et al. 1995. IEEE IEDM p. 119
12. Yuuki A, et al. 1995. IEEE IEDM p. 115
13. No K. 1996. MRS Conf. San Francisco
14. Hwang CS, et al. 1995. Appl. Phys. Lett. 67:2819
15. McMillan LD, et al. 1992. Integ. Ferroelec. 2:351
16. Kawahara T, et al. 1994. Jpn. J. Appl. Phys. 33:5129
17. Takemura K, et al. 1995. Jpn. J. Appl. Phys. 34:5224
18. Hwang CS, et al. 1998. J. Phys. Soc. Korea. In press
19. Yoshida M, et al. 1995. J. Electrochem. Soc. 142:244
20. Kingon AI, Streiffer SK, Basceri C, Summerfelt SR. 1997. MRS Bull. 21:46 Page 2
21. Yamauchi S, et al. 1995. IEDM Dig. p. 1199
22. Nishioka Y, et al. 1995. IEDM Dig. p. 903
23. Lee J, et al. 1995. IEDM Dig. p. 907
24. Grill A, Laibowitz R, Beach D, Neumayer D, Duncombe PR. 1997. Integ. Ferroelec. 14:211
25. Arita K, et al. 1996. 10th Int. Symp. Applications of Ferroelectrics, New Bruns-wick, NJ. New York: IEEE. p. 13
26. Paz de Araujo CA, McMillan LD, Cuchiaro JD, Scott MC, Scott JF. 1995. Nature 374:627
27. Shimada Y, et al. 1996. Integ. Ferroelec. 11:234
28. Lee W, Kim H. 1996. Integ. Ferroelec. 11:115
29. Lesaicherre P, et al. 1996. Integ. Ferroelec. 11:88
30. Ito Y, et al. 1997. Integ. Ferroelec. 14: 123
31. Amanuma K, Hase T, Miyasaka Y. 1994. Jpn. J. Appl. Phys. 33:5211
32. Waser R, Baiatu T, Hardtl K-H. 1990. J. Am. Ceram. Soc. 73:1645
33. Waser R, Baiatu T, Hardtl K-H. 1990. J. Am. Ceram. Soc. 73:1654
34. Waser R, Baiatu T, Hardtl K-H. 1990. J. Am. Ceram. Soc. 73:1663
35. Waser R, Klee M. 1992. Integ. Ferroelec. 2:288
36. Lee JK, Song TK, Jung HY. 1997. Integ. Ferroelec. 15:115
37. Paek SH, Park CS, Won JH, Lee KS. 1996. MRS Proc. 443:33
38. Eguchi K, Kiyotoshi M. 1997. Integ. Ferroelec. 14:33
39. Joshi V, DaCruz CP, Cuchiaro JC, Araujo CA, Zuleeg R. 1997. Integ. Ferroelec. 14:133
40. Waser R. 1995. Science and Technology of Electroceramic Thin Films p. 223. Dordrecht: Kluwer
41. Cho HJ, Lee JM, Shin JC, Kim HY. 1997. Integ. Ferroelec. 14:115
42. Kim NK, Yoon SG, Lee WJ, Kim HG. 1997. Integ. Ferroelec. 14:105
43. No K, et al. 1996. MRS Proc. 443:9
44. Kato Y, et al. 1996. MRS Proc. 443: 3
45. Gilbert SR, et al. 1996. MRS Proc. 443: 21
46. Solyappan N, Derbenwick GF, McMillan LD, Paz de Araujo CA, Hayashi S. 1997. Integ. Ferroelec. 14:237
47. Kawahara T, Yamamuka M, Makita T, Yuuki A, Mikami N, Ono K. 1995. MRS Proc. 361:361
48. Kussmaul A, Greenwald AC, Wei CH, Morse TF. 1996. MRS Proc. 443:39
49. Isobe C, et al. 1997. Integ. Ferroelec. 14: 95
50. Myers E, Kingon AI, eds. 1990. Ferroelectric Thin Films. MRS Proc. Vol. 200
51. Kingon AI, et al, eds. 1992. Ferroelectric Thin Films 11. MRS Proc. Vol. 243
52. Myers ER, et al, eds. 1993. Ferroelectric Thin Films 111. MRS Proc. Vol. 310
53. Tuttle BA, et al, eds. 1995. Ferroelectric Thin Films IV. MRS Proc. Vol. 361
54. Desu S, et al, eds. 1996. Ferroelectric Thin Films V. MRS Proc. Vol. 433
55. Singh R, et al, eds. 1996. Advanced Laser Processing of Materials- Fundamentals and Applications. MRS Proc. Vol. 397
56. Jia QX, Findikoglu A, Zhou R, Foltyn SR, Wu XD. 1997. Integ. Ferroelec. 14: 167
57. Miranda FA, Mueller CH, et al. 1997. Integ. Ferroelec. 14:173
58. Thomas D, Kingon AI, Auciello O, Waser R, Schumacher M. 1997. Integ. Ferroelec. 14:51
59. Yang P, Zhou N, Zheng L, Lu H, Lin C. 1997. J. Phys. D: Appl. Phys. 30:527
60. Tabata H, Tanaka H, Kawai T. 1995. Jpn. J. Appl. Phys. 34:5146
61. Pignolet A, et al. 1996. MRS Proc. 433: 125
62. Perez W, et al. 1996. MRS Proc. 433:63
63. Park BH, Noh TW, Lee J, Kim CY, Jo W. 1997. Integ. Ferroelec. 14:181
64. Watanabe Y, Matsumoto Y, Kunitomo H, Tanamura M, Nishimoto E. 1994. Jpn. J. Appl. Phys. 33:5182
65. Choopun S, Matsumoto T, Kawai T. 1995. Appl. Phys. Lett. 67:1072
66. Rodriguez MA, et al. 1997. Integ. Ferroelec. 14:201
67. Ryoo JS, Kang SJ, Yoon YS. 1996. MRS Proc. 443:69
68. Gust MC, Momoda LA, Mecartney ML. 1996. MRS Proc. 443:27
69. Xu Y, Mackenzie JD. 1992. Integ. Ferroelec. 1:17
70. Xu Y, Cheng CH, Mackenzie JD. 1994. J. Non-Cryst. Solids 176:1
71. Amanuma K, Kunio T. 1996. Jpn. J. Appl. Phys. 35:5229
72. Gerson R, Marshall TC. 1959. J. Appl. Phys. 30:1650
73. Duiker HM, Beale PD. 1990. Phys. Rev. B41:490
74. Duiker HM, Beale PD, Scott JF. 1990. J. Appl. Phys. 68:5783
75. Scott JF, Azuma M, et al. 1994. Integ. Ferroelec. 4:61
76. Goetzberger A, McDonald B, Haitz RH, Scarlet RM. 1980. J. Appl. Phys. 34: 1591
77. Pearsall TP. 1980. Appl. Phys. Lett. 36:218
78. Raleigh DO. 1972. In Fast-Ion Transport in Solids, ed. W. Van Gool, p. 479. Amsterdam: North-Holland
79. DeVeirman AEM, Staals AA, Klee M, Larsen PK. 1996. Ferroelectrics 186:51
80. Scott JF, Azuma M, et al. 1994. Integ. Ferroelec. 4:61
81. Hwang CS, et al. 1997. Appl. Phys. Lett. In press
82. Scott JF, Azuma M, et al. 1992. Proc. ISAF. p. 356
83. Waser R. 1996. Proc. Electroceram V, Aveiro, Portugal, p. 293
84. Watanabe K, et al. 1997. Integ. Ferroelec. 17:443, 451
85. Lee J, et al. 1997 Integ. Ferroelec. 17: 539
86. Hartmann AJ, Scott JF, et al. 1997. Integ. Ferroelec. 18:601
87. Frensley WR, Kroemer H. 1971. Phys. Rev. B 16:2642
88. Scott JF. 1995. Integ. Ferroelec. 9:1
89. Kurtin S, McGill TC, Mead CA. 1964. Phys. Rev. Lett. 12:390
90. Cowley AM, Sze SM. 1965. J. Appl. Phys. 36:3212
91. Sze SM. 1981. Physics of Semiconductor Devices. p. 273. New York: Wiley. 2nd ed.
92. Mihara T, Watanabe H, Yoshimori H. 1993. Nikkei Electronics 581:94
93. Mihara T, et al. 1992. Integ. Ferroelec. 1:269
94. Wu Z, Sayer M. 1992. ISAF Proc. Pap. 5C-10:244
95. Scott JF. 1997. Ferroelec. Rev. 1:1
96. Mead CA, Spitzer WG. 1964. Phys. Rev. 134:A713
97. Melnick BM, Scott JF, Araujo CA, McMillan LD. 1992. Ferroelectrics 135: 163
98. Wouters DJ, Willems GJ, Maes HE. 1995. Microelectron. Eng. 29:249-56
99. de Wette F. 1998. Z. Phys. In press
100. Ramesh R, Inam A, et al. 1990. Science 247:57
101. Ramesh R, et al. 1991. Science 252: 944
102. Yoo IK, Desu SB, Xing J. 1993. MRS Proc. 310:165
103. Nakamura T, Nakao Y, Kamisawa A, Takasu H. 1994. Appl. Phys. Lett. 65: 1522
104. Ramesh R, Lee J, Sands T, Keramidis VG, Auciello O. 1994. Appl. Phys. Lett. 64:2517
105. Auciello O, Al-ShareefHN, Gifford KD, et al. 1994. MRS Proc. p. 341
106. Ramesh R, et al. 1991. Appl. Phys. Lett. 59:1782
107. Ramesh R, et al. 1991. Integ. Ferroelec. 1:205
108. Ramesh R, et al. 1993. Appl. Phys. Lett. 63:3592
109. Al-ShareefHN, Kingon AI, Chen X, Auciello O. 1994. J. Mater. Res. 9:2960
110. Ramesh R. 1996. U.S. Patent No. 5,519,235
111. Ramesh R. 1995. U.S. Patent No. 5,479,317
112. Pike GE, Warren WL, Dimos D, Tuttle BA, Ramesh R, et al. 1995. Appl. Phys. Lett. 66:484
113. Tuttle BA, et al. 1992. ISAF p. 344
114. Tuttle BA, et al. 1995. In Science and Technology of Electroceramic Thin Films, ed. O Auciello, R Waser, p. 117. Dordrecht: Kluwer
115. Scott JF, et al. 1991. J. Appl. Phys. 70: 382
116. Stannard WB, Johnston PN, Scott JF, et al. 1995. Integ. Ferroelec. 9:245
117. Stannard WB, et al. 1995. Microelectron. Eng. 29:193
118. Johnston PN, et al. 1997. Integ. Ferroelec. 16:765
119. Robblee LS. 1986. U. S. Patent No. 4,677,989
120. Robblee LS. 1986. U. S. Patent No. 4,717,581
121. Robblee LS, Mangaudis WJ, et al. 1986. MRS Proc. 55:303
122. Robblee LS, Cogan SF. 1988. In Encyclopedia of Materials Science and Engineering, ed. RW Cahn, pp. 276-93. Oxford: Pergamon. Suppl. 1
123. Robblee LS, Rose TL. 1989. In Neural Prostheses:Fundamental Studies, ed. W Agnew, D McCreery, pp. 117-29. Englewood Cliffs, NJ: Prentice-Hall
124. Brummer SB, Robblee LS, Hambrecht FT. 1983. Ann. NY Acad. Sci. 405:159
125. Katori K, et al. 1997. MRS Proc. 17:443, 531, p. 7
126. Auciello O, Dat R, Ramesh R. 1996. In Ferroelectric Thin Films, ed. C Paz de Araujo, JF Scott, GW Taylor, p. 525. Amsterdam: Gordon & Breach
127. Hermann AM, Scott JF, et al. 1994. J. Superconduct. 71:463
128. Hermann AM, Price JC, Scott JF, et al. 1993. Bull. Am. Phys. Soc. 38:689
129. Scott JF, Galt D, et al. 1995. Integ. Ferroelec. 6:189
130. Galt D, Price JC, Beall JA, Ono RH. 1993. Appl. Phys. Lett. 63:3078
131. Watanabe Y, Sawamura D. 1996. Jpn. J. Appl. Phys. 35:1564
132. Watanabe Y, Sawamura D. 1997. Jpn. J. Appl. Phys. In press
133. Eaton S. 1986. U. S. Patent No. 4,873,664
134. Jo W, Kim DC, Lee HM, Kim KY. 1996. MRS Proc. 443:57
135. McMillan LD, Araujo CA, Scott JF. 1992. MRS Proc. 230:277
136. Kingon AI. 1992. MRS Proc. 243:18
137. Hren PD, et al. 1992. MRS Proc. 260: 575
138. Summerfelt SR, Kotecki D, Kingon AI, Al-Shareef HN. 1995. MRS Proc. 361:257
139. Kinne W, Kinney Y. 1994. ISIF Conf. Colorado Springs. 4:131
140. Von Hippel A. 1935. Ergeb. Exakten Naturwiss. 14:118
141. Von Hippel A, 1936. Z. Phys. 98:580
142. Von Hippel A. 1937. J. Appl. Phys. 8: 815
143. Kano G. 1997. ISIF Conf. Colorado Springs. 1:621