Electronic structure of the ferroelectric layered perovskite SrBi2Ta2O9

Applied Physics Letters

Volumn 69, Issue 12, 1996, Pages 1704-1706

  Robertson, J ^a   Chen, C W ^a   Warren, W L ^b   Gutleben, C D ^c  

^a UNIVERSITY OF CAMBRIDGE   (United Kingdom)

^b SANDIA NATIONAL LABORATORIES   (United States)

^c SONY CORPORATION   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

CALCULATIONS; CHEMICAL BONDS; ELECTRONIC DENSITY OF STATES; ELECTRONIC PROPERTIES; ENERGY GAP; FERROELECTRICITY; GREEN'S FUNCTION; STRONTIUM COMPOUNDS; X RAY PHOTOELECTRON SPECTROSCOPY;

CONDUCTION BAND; ELECTRONIC DEFECT STATES; STRONTIUM BISMUTH TANTALATE; TIGHT BINDING METHOD; VALENCE BAND;

BAND STRUCTURE;

EID: 0030244584     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.118003     Document Type: Article

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