Reduction of current leakage in chemical-vapor deposited Ta2O5 thin-films by oxygen-radical annealing

IEEE Electron Device Letters

Volumn 17, Issue 9, 1996, Pages 431-433

  Matsui, Yuichi ^a   Torii, Kazuyoshi ^a   Hirayama, Misuzu ^a   Fujisaki, Yoshihisa ^a   Iijima, Shimpei ^a   Ohji, Yuzuru ^a,b  

^a HITACHI LTD   (Japan)

^b IEEE

Author keywords

[No Author keywords available]

Indexed keywords

ANNEALING; CHEMICAL VAPOR DEPOSITION; CRYSTAL DEFECTS; ELECTRIC PROPERTIES; INTERFACES (MATERIALS); LEAKAGE CURRENTS; SEMICONDUCTOR GROWTH; SILICA; TANTALUM COMPOUNDS;

CURRENT LEAKAGE REDUCTION; FILM THICKNESS; OXYGEN RADICAL ANNEALING;

THIN FILMS;

EID: 0030243348     PISSN: 07413106     EISSN: None     Source Type: Journal    
DOI: 10.1109/55.536283     Document Type: Article

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