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Volumn 16, Issue 1-4, 1997, Pages 1-19

A review of high dielectric materials for dram capacitors

Author keywords

[No Author keywords available]

Indexed keywords

CAPACITORS; PEROVSKITE; RANDOM ACCESS STORAGE;

EID: 0031334253     PISSN: 10584587     EISSN: None     Source Type: Journal    
DOI: 10.1080/10584589708013025     Document Type: Article
Times cited : (126)

References (46)
  • 1
    • 7044240667 scopus 로고    scopus 로고
    • U.S. Patent 3,387,286, R. Dennard, 1967
    • U.S. Patent 3,387,286, R. Dennard, 1967.
  • 3
    • 0029207689 scopus 로고
    • C. Goltner, K. Hominger, Bull. Schweiz. Elektrotech., 86, 11 (1995); L. Geppert, IEEE Spectr., 32, 35 (1995).
    • (1995) IEEE Spectr. , vol.32 , pp. 35
    • Geppert, L.1
  • 8
    • 7044245499 scopus 로고    scopus 로고
    • See U.S. Patents: 5,236,860, 5,262,662, 5,281,549,5,240,871 and references therein
    • See U.S. Patents: 5,236,860, 5,262,662, 5,281,549,5,240,871 and references therein.
  • 14
    • 7044252865 scopus 로고
    • S.C. Sun and T.F. Chen, IEDM, 12.4 (1994); K.W. Kwon, I.S. Park, D.H. Han, E.S. Kim, S.T. Ahn, and M.Y. Lee, IEDM, 34.2 (1994).
    • (1994) IEDM
    • Sun, S.C.1    Chen, T.F.2
  • 42
    • 7044261965 scopus 로고
    • H.M. Grimes, Texas Instrum. Tech. J., 12, 5 (1995); W. Fosnight, R. Martin, A.C. Bonora, Solid State Technol., 22, 77 (1996).
    • (1995) Texas Instrum. Tech. J. , vol.12 , pp. 5
    • Grimes, H.M.1


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.