Determination of tilt in the lateral epitaxial overgrowth of GaN using X-ray diffraction

Journal of Crystal Growth

Volumn 209, Issue 4, 2000, Pages 581-590

  Fini, P ^a   Marchand, H ^a   Ibbetson, J P ^b   DenBaars, S P ^a   Mishra, U K ^a   Speck, J S ^a  

^a Santa Barbara   (United States)

^b Nitres   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ASPECT RATIO; CRYSTAL ORIENTATION; EPITAXIAL GROWTH; INTERFACES (MATERIALS); MASKS; METALLORGANIC CHEMICAL VAPOR DEPOSITION; MORPHOLOGY; SCANNING ELECTRON MICROSCOPY; SEMICONDUCTOR GROWTH; SILICA; THERMAL EFFECTS; X RAY CRYSTALLOGRAPHY;

GALLIUM NITRIDE; LATERAL EPITAXIAL OVERGROWTH (LEO); WING TILT;

SEMICONDUCTING GALLIUM COMPOUNDS;

EID: 0033882278     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0022-0248(99)00634-X     Document Type: Article

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