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Volumn 84, Issue 12, 1998, Pages 6937-6939

Microscopic bending of GaAs layers grown by epitaxial lateral overgrowth

Author keywords

[No Author keywords available]

Indexed keywords


EID: 0000260012     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.368995     Document Type: Article
Times cited : (26)

References (11)
  • 8
    • 0004242004 scopus 로고
    • INSPEC, the Institute of Electrical Engineers, London
    • J. C. Brice, Properties of Gallium Arsenide (INSPEC, the Institute of Electrical Engineers, London 1986).
    • (1986) Properties of Gallium Arsenide
    • Brice, J.C.1


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.