Electrical characterization of GaN p-n junctions with and without threading dislocations

Applied Physics Letters

Volumn 73, Issue 7, 1998, Pages 975-977

  Kozodoy, P ^a   Ibbetson, J P ^a   Marchand, H ^a   Fini, P T ^a   Keller, S ^a   Speck, J S ^a   Denbaars, S P ^a   Mishra, U K ^a  

^a UNIVERSITY OF CALIFORNIA   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 0000100475     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.122057     Document Type: Article

References (12)

1. D. Kapolnek, S. Keller, R. Vetury, R. D. Underwood, P. Kozodoy, S. P. DenBaars, and U. K. Mishra, Appl. Phys. Lett. 71, 1204 (1997).
2. T. S. Zheleva, O-H Nam, M. D. Bremser, and R. F. Davis, Appl. Phys. Lett. 71, 2638 (1997).
3. A. Usui, H. Sunakawa, A. Sakai, and A. Yamaguchi, Jpn. J. Appl. Phys., Part 1 36, L899 (1997).
4. H. Marchand, J. P. Ibbetson, P. T. Fini, P. Kozodoy, S. Keller, S. P. DenBaars, J. S. Speck, and U. K. Mishra, MRS Internet J. Nitride Semicond. Res. 3, 3 (1998).
5. S. Nakamura, M. Senoh, S. Nagahama, N. Iwasa, T. Yamada, T. Matsushita, H. Kiyoku, Y. Sugimoto, T. Kozaki, H. Umemoto, M. Sano, and K. Chocho, Appl. Phys. Lett. 72, 211 (1998).
6. N. Kuroda, C. Sasaoka, A. Kimura, A. Usui, and Y. Mochizuki, Proceeding of Second International Conference on Nitride Semiconductors, 1997, p. 392.
7. N. G. Weimann and L. F. Eastman, Proceedings of IEEE/Cornell Conference, 1997, p. 219.
8. H. El Ghitani and M. Pasquinelli, J. Phys. III 3, 1931 (1993).
9. F. M. Ross, R. Hull, D. Bahnck, J. C. Bean, L. J. Peticolas, and C. A. King, Appl. Phys. Lett. 62, 1426 (1993).
10. R. S. List, J. Electron. Mater. 22, 1017 (1993).
11. D. V. Kuksenkov, H. Temkin, A. Osinsky, R. Gaska, and M. A. Khan, Proceedings of the IEEE IEDM, 1997, p. 759.
12. J. Frenkel, Phys. Rev. 54, 647 (1938).