A non-local impact ionization/lattice temperature model for VLSI double-gate ultrathin SOI NMOS devices

IEEE Transactions on Electron Devices

Volumn 44, Issue 2, 1997, Pages 324-330

  Su, Ker Wie ^a,b   Kuo, J B ^a  

^a IEEE   (Taiwan)

^b NATIONAL TAIWAN UNIVERSITY   (Taiwan)

Author keywords

[No Author keywords available]

Indexed keywords

ELECTRIC FIELD EFFECTS; ELECTRIC FIELDS; GATES (TRANSISTOR); IONIZATION; SEMICONDUCTOR DEVICE MODELS; SILICON ON INSULATOR TECHNOLOGY; TEMPERATURE; THERMAL EFFECTS; VLSI CIRCUITS;

LATTICE TEMPERATURE; NON LOCAL IMPACT IONIZATION;

MOS DEVICES;

EID: 0031077778     PISSN: 00189383     EISSN: None     Source Type: Journal    
DOI: 10.1109/16.557726     Document Type: Article

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