Analytical calculation of subthreshold slope increase in short-channel mosfet’s by taking drift component into account

Japanese Journal of Applied Physics

Volumn 34, Issue 2S, 1995, Pages 917-920

  Biesemans, Serge ^a   Meyer, Kristin De ^a  

^a IMEC   (Belgium)

Author keywords

Analytical solution; Device physics; Short channel effect; Subthreshold slope

Indexed keywords

APPROXIMATION THEORY; CALCULATIONS; CARRIER CONCENTRATION; CURRENT DENSITY; ELECTROSTATICS; GATES (TRANSISTOR); NUMERICAL ANALYSIS; SEMICONDUCTOR DEVICE MODELS;

CONTINUITY EQUATION; DEVICE PHYSICS; DRIFT DIFFUSION; ELECTRICAL POTENTIAL; SHORT CHANNEL EFFECT; SUBTHRESHOLD SLOPE; THRESHOLD VOLTAGE; TWO DIMENSIONAL POISSON EQUATION;

MOSFET DEVICES;

EID: 0029256199     PISSN: 00214922     EISSN: 13474065     Source Type: Journal    
DOI: 10.1143/JJAP.34.917     Document Type: Article

References (6)

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