Double-Gate Silicon-on-Insulator Transistor with Volume Inversion: A New Device with Greatly Enhanced Performance

IEEE Electron Device Letters

Volumn 8, Issue 9, 1987, Pages 410-412

  Balestra, Francis ^a   Cristoloveanu, Sorin ^a   Benachir, Mohcine ^a   Brini, Jean ^a   Elewa, Tarek ^a  

^a GRENOBLE INSTITUTE OF TECHNOLOGY   (France)

Author keywords

[No Author keywords available]

Indexed keywords

COMPUTER SIMULATION; SEMICONDUCTING SILICON;

SILICON-ON-INSULATOR (SOI) TRANSISTORS;

TRANSISTORS;

EID: 0023421993     PISSN: 07413106     EISSN: 15580563     Source Type: Journal    
DOI: 10.1109/EDL.1987.26677     Document Type: Article

References (5)

1. T. Sekigawa and Y. Hayashi, “Calculated threshold-voltage characteristics of an XMOS transistor having an additional bottom gate,” Solid-State Electron. vol. 27. p. 827, 1984.
2. S. Cristoloveanu, J. Pumfrey, R. P. Arrowsmith, J. Brini, and P. L. F. Hemment, “Properties of front and buried interfaces of oxygen implanted SOI films deduced from MOS device characterstics,” in Insulating Films on Semiconductors, J. J. Simonne and J. Buxo, Eds. North Holland: Elsevier, 1986, pp. 49–52.
3. F. Balestra, J. Brini, and P. Gentil, “Deep depleted SOI MOSFET's with back potential control: A numerical simulation,” Solid-State Electron., vol. 28, no. 10, 1031–1037, 1985.
4. S. Cristoloveanu, S. Gardner, C. Jaussaud, J. Margail, A. J. Auberton-Herve, and M. Bruel, “SIMOX material annealed at high temperature: Carrier transport, oxygen activity and interface properties,” submitted to J. Appl. Phys., 1987.
5. G. K. Celler, J. L. Batstone, K. W. West, P. L. F. Hemment, and K. J. Reeson, “Si-on-SiO 2 structures by lamp annealing of oxygen implanted Si,” presented at the 1986 IEEE SOS/SOI Workshop, Captiva, USA, Oct. 1986.