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Solid State Electronics

Volumn 16, Issue 10, 1973, Pages 1189-1203

Electron and hole ionization rates in epitaxial silicon at high electric fields

(1) Grant, W N a

a LUCENT TECHNOLOGIES (United States)

Author keywords

[No Author keywords available]

Indexed keywords

SEMICONDUCTOR DIODES;

EID: 0015673363 PISSN: 00381101 EISSN: None Source Type: Journal
DOI: 10.1016/0038-1101(73)90147-0 Document Type: Article

Times cited : (391)

References (24)

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8
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- Beam-Lead Technology
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- Lepselter¹

9
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- C.T. Neppell and J.H. Wernick, unpublished results

10
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- D.L. Scharfetter, unpublished results

11
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- Large-signal analysis of a silicon Read diode oscillator
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- Scharfetter¹ Gummel²

12
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- Avalanche Region of IMPATT Diodes
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18
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- A small-signal theory of avalanche noise in IMPATT diodes
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19
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- Noise spectra of a CW silicon TRAPATT oscillator
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- Evans¹

20
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- W. Niehaus, T. Seidel and D. Iglesias, to be published

21
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22
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23
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* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.