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Volumn 40, Issue 3, 1993, Pages 598-604

Computer-Aided Performance Assessment of Fully Depleted SO1 CMOS VLSI Circuits

Author keywords

[No Author keywords available]

Indexed keywords

BIPOLAR TRANSISTORS; CMOS INTEGRATED CIRCUITS; COMPUTER AIDED ANALYSIS; DIGITAL INTEGRATED CIRCUITS; MOSFET DEVICES; SEMICONDUCTING SILICON; SEMICONDUCTOR DEVICE MODELS; SILICON ON INSULATOR TECHNOLOGY;

EID: 0027553182     PISSN: 00189383     EISSN: 15579646     Source Type: Journal    
DOI: 10.1109/16.199366     Document Type: Article
Times cited : (11)

References (16)
  • 2
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    • J. Y. Choi and J. G. Fossum, “Analysis and control of floating-body bipolar effects in fully depleted submicrometer SOI MOSFET’s,” IEEE Trans. Electron Devices, vol. 38, pp. 1384–1391, June 1991.
    • (1991) IEEE Trans. Electron Devices , vol.38 , pp. 1384-1391
    • Choi, J.Y.1    Fossum, J.G.2
  • 3
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    • Threshold voltage of thin-film silicon-on-insulator (SOI) MOSFET’s
    • Oct.
    • H.K. Lim and J. G. Fossum, “Threshold voltage of thin-film silicon-on-insulator (SOI) MOSFET’s,” IEEE Trans. Electron Devices, vol. ED-30, pp. 1244–1251, Oct. 1983.
    • (1983) IEEE Trans. Electron Devices , vol.ED-30 , pp. 1244-1251
    • Lim, H.K.1    Fossum, J.G.2
  • 4
    • 0024627953 scopus 로고
    • Short-channel effects in SOI MOSFET’s
    • Mar.
    • S. Veeraraghavan and J. G. Fossum, “Short-channel effects in SOI MOSFET’s, ” IEEE Trans. Electron Devices, vol. 36, pp. 522–528, Mar. 1989.
    • (1989) IEEE Trans. Electron Devices , vol.36 , pp. 522-528
    • Veeraraghavan, S.1    Fossum, J.G.2
  • 5
    • 0026682174 scopus 로고
    • Premature breakdown in non-fully depleted SOI/MOSFETS with body-tied-to-source structure
    • Oct
    • J. M. Hwang et al., “Premature breakdown in non-fully depleted SOI/MOSFETS with body-tied-to-source structure,” in Proc. 1991 IEEE Internal. SOI Conf., Oct. 1991, pp. 34–35.
    • (1991) Proc. 1991 IEEE Internal. SOI Conf. , pp. 34-35
    • Hwang, J.M.1
  • 6
    • 0023999599 scopus 로고
    • Avalanche-induced drain-source breakdown in silicon-on-insulator n-MOSFET’s
    • K. K. Young and J. A. Burns, “Avalanche-induced drain-source breakdown in silicon-on-insulator n-MOSFET’s,” IEEE Trans. Electron Devices, vol. 35, pp. 426–431, Apr. 1988.
    • (1988) IEEE Trans. Electron Devices , vol.35 , pp. 426-431
    • Young, K.K.1    Burns, J.A.2
  • 7
    • 0024133319 scopus 로고
    • Single-transistor latch in SOI MOSFET’s
    • C.E. D. Chen et al., “Single-transistor latch in SOI MOSFET’s,” IEEE Electron Device Lett., vol. 9, pp. 636–638, Dec. 1988.
    • (1988) IEEE Electron Device Lett. , vol.9 , pp. 636-638
    • Chen, C.E.D.1
  • 8
    • 0024106969 scopus 로고
    • A physical short-channel model for the thin-film SOI MOSFET applicable to device and circuit CAD
    • S. Veeraraghavan and J. G. Fossum, “A physical short-channel model for the thin-film SOI MOSFET applicable to device and circuit CAD,” IEEE Trans. Electron Devices, vol. 35, pp. 1866–1875, Nov. 1988.
    • (1988) IEEE Trans. Electron Devices , vol.35 , pp. 1866-1875
    • Veeraraghavan, S.1    Fossum, J.G.2
  • 9
    • 84941432206 scopus 로고
    • Modeling and simulation of the fully depleted silicon-on-insulator MOSFET for submicron CMOS IC design
    • J. Y. Choi, “Modeling and simulation of the fully depleted silicon-on-insulator MOSFET for submicron CMOS IC design,” Ph.D. dissertation, University of Florida, Gainesville, 1991.
    • (1991) Ph.D. dissertation, University of Florida, Gainesville
    • Choi, J.Y.1
  • 10
    • 84954108170 scopus 로고
    • Non-local impact ionization in silicon devices
    • J. W. Slotboom et al., “Non-local impact ionization in silicon devices,” in IEDM Tech. Dig., 1991, pp. 127–130.
    • (1991) IEDM Tech. Dig. , pp. 127-130
    • Slotboom, J.W.1
  • 12
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    • Salicided source/drain considerations on UTF SIMOX
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    • S. M. Tyson and R. W. Gallegos, “Salicided source/drain considerations on UTF SIMOX,” in Proc. 1991 IEEE Int. SOI Conf., Oct. 1991, pp. 66–67.
    • (1991) Proc. 1991 IEEE Int. SOI Conf. , pp. 66-67
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  • 13
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    • Suppression of latch in SOI MOSFETs by silicidation of source
    • L. J. McDaid, S. Hall, W. Eccleston, and J. C. Alderman, “Suppression of latch in SOI MOSFETs by silicidation of source,” Electron. Lett., vol. 27, pp. 1003–1005, May 1991.
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    • McDaid, L.J.1    Hall, S.2    Eccleston, W.3    Alderman, J.C.4
  • 14
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    • Floating-body problems and benefits in fully depleted SOI CMOS VLSI circuits
    • J. G. Fossum, P.C. Yeh, and J. Y. Choi, “Floating-body problems and benefits in fully depleted SOI CMOS VLSI circuits,” in IEDM Tech. Dig., 1991, pp. 325–328.
    • (1991) IEDM Tech. Dig. , pp. 325-328
    • Fossum, J.G.1    Yeh, P.C.2    Choi, J.Y.3
  • 16
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    • Half-micron CMOS on ultra-thin silicon on insulator
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    • (1989) IEDM Tech. Dig. , pp. 821-824
    • Woerlee, P.H.1


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.