Physical Background of Substrate Current Characteristics and Hot-Carrier Immunity in Short-Channel Ultrathin-Film MOSFET’s/SIMOX

IEEE Transactions on Electron Devices

Volumn 41, Issue 3, 1994, Pages 352-358

  Omura, Yasuhisa ^a   Izumi, Katsutoshi ^a  

^a NTT CORPORATION   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

DEGRADATION; ELECTRIC CURRENTS; GATES (TRANSISTOR); HOT CARRIERS; RELIABILITY; SEMICONDUCTING SILICON; SEMICONDUCTOR DEVICE MODELS; SEMICONDUCTOR DEVICE STRUCTURES; SERVICE LIFE; SUBSTRATES; THIN FILM DEVICES;

HOT CARRIER IMMUNITY; SHORT CHANNEL ULTRATHIN FILM MOSFETS/SIMOX; SUBSTRATE CURRENT CHARACTERISTICS;

MOSFET DEVICES;

EID: 0028401499     PISSN: 00189383     EISSN: 15579646     Source Type: Journal    
DOI: 10.1109/16.275220     Document Type: Article

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