Analytical threshold voltage formula including narrow-channel effects for vlsi mesa-isolated fully depleted ultrathin silicon-on-insulator n-channel metal-oxide-silicon devices

Japanese Journal of Applied Physics

Volumn 34, Issue 8 R, 1995, Pages 4010-4019

  Su, Ker Wei ^a   Kuo, James B ^a  

^a NATIONAL TAIWAN UNIVERSITY   (Taiwan)

Author keywords

N channel metal oxide silicon; Narrow channel effect; Silicon on insulator; Threshold voltage

Indexed keywords

CURRENT VOLTAGE CHARACTERISTICS; ELECTROSTATICS; GATES (TRANSISTOR); MOS DEVICES; OXIDES; SEMICONDUCTING SILICON; SEMICONDUCTOR DEVICE MODELS; SEMICONDUCTOR DEVICE STRUCTURES; ULTRATHIN FILMS; VLSI CIRCUITS;

NARROW CHANNEL EFFECT; THRESHOLD VOLTAGE;

SILICON ON INSULATOR TECHNOLOGY;

EID: 0029354419     PISSN: 00214922     EISSN: 13474065     Source Type: Journal    
DOI: 10.1143/JJAP.34.4010     Document Type: Article

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