Implementation of Nonlocal Model for Impact-Ionization Current in Bipolar Circuit Simulation and Application to SiGe HBT Design Optimization

IEEE Transactions on Electron Devices

Volumn 42, Issue 6, 1995, Pages 1166-1173

  Hong, Ghy Boong ^a   Fossum, Jerry G ^a  

^a UNIVERSITY OF FLORIDA   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 0000914943     PISSN: 00189383     EISSN: 15579646     Source Type: Journal    
DOI: 10.1109/16.387252     Document Type: Article

References (17)

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