An Analytical Breakdown Model for Short-Channel MOSFET’s

IEEE Transactions on Electron Devices

Volumn 29, Issue 11, 1982, Pages 1735-1740

  Hsu, Fu Chieh ^a   Ko, Ping Keung ^a,b   Tam, Simon ^a   Hu, Chenming ^a   Muller, Richard S ^a  

^a UNIVERSITY OF CALIFORNIA   (United States)

^b LUCENT TECHNOLOGIES   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

SEMICONDUCTOR DEVICES, MOSFET;

EID: 0020205140     PISSN: 00189383     EISSN: 15579646     Source Type: Journal    
DOI: 10.1109/T-ED.1982.21018     Document Type: Article

References (8)

1. D. P. Kennedy and A. Phillips, Jr., “Source-drain breakdown in an insulated gate field-effect transistor,” in IEDM Tech. Dig., p. 160, 1973.
2. T. Toyabe, K. Yamaguchi, S. Asai, and M. S. Mock, “A two-dimensional avalanche breakdown model of submicron MOSFET's,” in IEDM Tech. Dig., p. 432, 1977; also “A numerical model of avalanche breakdown in MOSFET's,” IEEE Trans. Electron Devices, vol. ED-25, p. 825, 1978.
3. E. Sun, J. Moll, J. Berger, and B. Alders, “Breakdown mechanism in short-channel MOS transistors,” in IEDM Tech. Dig., p. 478, 1978.
4. P.-K. Ko, R. S. Muller, and C. Hu, “A unified model for hot-electron currents in MOSFET's,” in IEDM Tech. Dig., p. 600, 1981.
5. E. Sun, “Short-channel MOS modeling for CAD,” in ICCC Tech. Dig., p. 493, 1979.
6. A. Shütz, S. Selberherr, and H. W. Pötzl, “A two-dimensional model of the avalanche effect in MOS transistors,” Solid-State Electron., vol. 25, p. 177, 1982.
7. C. Hu and M.-H. Chi, “Second breakdown of vertical power MOSFET,” IEEE Trans. Electron Devices, vol. ED-29, pp. 1287–1293, 1982.
8. Y. A. El-Mansy and D. M. Caughey, “Modeling weak avalanche multiplication currents in IGFET's and SOS transistors for CAD,” in IEDM Tech. Dig., p. 31, 1975.