New experimental findings on hot carrier transport under velocity saturation regime in Si MOSFETs

Technical Digest - International Electron Devices Meeting, IEDM

Volumn 1992-December, Issue , 1992, Pages 711-714

  Takagi, S ^a   Toriumi, A ^a  

^a TOSHIBA CORPORATION   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

CARRIER CONCENTRATION; ELECTRIC FIELDS; HOT CARRIERS; MOSFET DEVICES; TRANSPORT PROPERTIES; VELOCITY;

HIGH FIELD; IONIZATION RATES; NON-STATIONARY TRANSPORTS; PINCH-OFF REGION; RESISTIVE GATE; SATURATION VELOCITY; TANGENTIAL ELECTRIC FIELD; VELOCITY SATURATION;

IMPACT IONIZATION;

EID: 84994812174     PISSN: 01631918     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/IEDM.1992.307458     Document Type: Conference Paper

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