-
1
-
-
0025522043
-
Ultrathin silicon-on-insulator for high speed sub-micrometer CMOS technology
-
P. K. Vasudev, “Ultrathin silicon-on-insulator for high speed sub-micrometer CMOS technology,” Solid-State Technol., pp. 61–65, Nov. 1990.
-
(1990)
Solid-State Technol.
, pp. 61-65
-
-
Vasudev, P.K.1
-
2
-
-
0024626928
-
Analysis of conduction in fully depleted SOI MOS-FET’s
-
K. K. Young, “Analysis of conduction in fully depleted SOI MOS-FET’s,” IEEE Trans. Electron Devices, vol.36, pp. 504–506, 1989.
-
(1989)
IEEE Trans. Electron Devices
, vol.36
, pp. 504-506
-
-
Young, K.K.1
-
3
-
-
0025486394
-
Two dimensional analytical modeling of very thin SOI MOSFET’s
-
J. C. S. Woo, K. W. Terrill, and P. K. Vasudev, “Two dimensional analytical modeling of very thin SOI MOSFET’s,” IEEE Trans. Electron Devices, vol. 37, pp. 1999–2006, 1990.
-
(1990)
IEEE Trans. Electron Devices
, vol.37
, pp. 1999-2006
-
-
Woo, J.C.S.1
Terrill, K.W.2
Vasudev, P.K.3
-
4
-
-
0025484481
-
Modeling of the subthreshold characteristics of SOI MOSFET’s with floating body
-
---M. Matloubian, C.E.D. Chen, B.Y. Mao, R. Sundaresan, and G.P. Pollack, “Modeling of the subthreshold characteristics of SOI MOSFET’s with floating body,” IEEE Trans. Electron Devices, vol. 37, pp. 1985–1994, 1990.
-
(1990)
IEEE Trans. Electron Devices
, vol.37
, pp. 1985-1994
-
-
Matloubian, M.1
Chen, C.E.D.2
Mao, B.Y.3
Sundaresan, R.4
Pollack, G.P.5
-
5
-
-
0023961488
-
Reduction of kink effect in thin-film SOI MOS-FET’s
-
J.P. Colinge, “Reduction of kink effect in thin-film SOI MOS FET’s,” IEEE Electron Device Lett., vol. 9, pp. 97–99, 1988.
-
(1988)
IEEE Electron Device Lett.
, vol.9
, pp. 97-99
-
-
Colinge, J.P.1
-
6
-
-
0039147383
-
Analysis of kink characteristics in silicon-on-insulator MOSFET’s using two-carrier modeling
-
K. Kato, T. Wada, and K. Taniguchi, “Analysis of kink characteristics in silicon-on-insulator MOSFET’s using two-carrier modeling,” IEEE Trans. Electron Devices, vol. ED-32, pp. 458–462, 1985.
-
(1985)
IEEE Trans. Electron Devices
, vol.ED-32
, pp. 458-462
-
-
Kato, K.1
Wada, T.2
Taniguchi, K.3
-
7
-
-
0026172212
-
Analysis and control of floating-body bipolar effects in fully depleted submicrometer SOI MOSFET’s
-
J.Y. Choi and J.G. Fossum, “Analysis and control of floating-body bipolar effects in fully depleted submicrometer SOI MOSFET’s,” IEEE Trans. Electron Devices, vol. 38, pp. 1384–1391, 1991.
-
(1991)
IEEE Trans. Electron Devices
, vol.38
, pp. 1384-1391
-
-
Choi, J.Y.1
Fossum, J.G.2
-
8
-
-
0024048586
-
Two-dimensional numerical analysis of the floating region in SOI MOSFET’s
-
S.P. Edwards, K.J. Yallup, and K.M. De meyer, “Two-dimensional numerical analysis of the floating region in SOI MOSFET’s,” IEEE Trans. Electron Devices, vol. 35, pp. 1012–1020, 1988.
-
(1988)
IEEE Trans. Electron Devices
, vol.35
, pp. 1012-1020
-
-
Edwards, S.P.1
Yallup, K.J.2
De meyer, K.M.3
-
9
-
-
0026835666
-
Requirement for accurate MOS-SOI device simulation
-
---R. Rios, R. Amantea, R. K. Smeltzer, and A. Rothwarf, “Requirement for accurate MOS-SOI device simulation,” IEEE Trans. Electron Devices, vol. 39, 581–586, 1992.
-
(1992)
IEEE Trans. Electron Devices
, vol.39
, pp. 581-586
-
-
Rios, R.1
Amantea, R.2
Smeltzer, R.K.3
Rothwarf, A.4
-
10
-
-
0026202127
-
An analytical model for back-gate effects on ultrathin-film SOI MOSFET’s
-
H. T. Chen and R. S. Huang, “An analytical model for back-gate effects on ultrathin-film SOI MOSFET’s,” IEEE Electron Device Lett., vol. 12, pp. 433–435, 1991.
-
(1991)
IEEE Electron Device Lett.
, vol.12
, pp. 433-435
-
-
Chen, H.T.1
Huang, R.S.2
-
11
-
-
0020830319
-
Threshold voltage of thin-film silicon-on-insulator (SOI) MOSFET’s
-
H. K. Lim and J. G. Fossum, “Threshold voltage of thin-film silicon-on-insulator (SOI) MOSFET’s,” IEEE Trans. Electron Devices, vol. ED-30, pp. 1244–1251, 1983.
-
(1983)
IEEE Trans. Electron Devices
, vol.ED-30
, pp. 1244-1251
-
-
Lim, H.K.1
Fossum, J.G.2
-
12
-
-
0021405436
-
Current-voltage characteristics of thin-film SOI MOSFET’s in strong inversion
-
H. K. Lim and J. G. Fossum, “Current-voltage characteristics of thin-film SOI MOSFET’s in strong inversion,” IEEE Trans. Electron Devices, vol. ED-31, pp. 401–408, 1984.
-
(1984)
IEEE Trans. Electron Devices
, vol.ED-31
, pp. 401-408
-
-
Lim, H.K.1
Fossum, J.G.2
-
15
-
-
84942392569
-
-
Veinna: Technical Univ. Veinna
-
P. Pichler, H. Potzl, A. Schultz, and S. Selberherr, MINIMOS 4 User’s Guide. Veinna: Technical Univ. Veinna, p. 11.
-
MINIMOS 4 User’s Guide.
, pp. 11
-
-
Pichler, P.1
Potzl, H.2
Schultz, A.3
Selberherr, S.4
-
16
-
-
0022135706
-
Dependence of channel electric field on device scaling
-
T. Y. Chan, P. K. Ko, and C. Hu, “Dependence of channel electric field on device scaling,” IEEE Electron Device Lett., vol. EDL-6, pp. 551–553, 1985.
-
(1985)
IEEE Electron Device Lett.
, vol.EDL-6
, pp. 551-553
-
-
Chan, T.Y.1
Ko, P.K.2
Hu, C.3
-
18
-
-
0023438606
-
Hot-electron effects in silicon-on-insulator n-Channel MOSFET
-
J.P. Colinge, “Hot-electron effects in silicon-on-insulator n-Channel MOSFET’s,” IEEE Trans. Electron Devices, vol. ED-34, pp. 2173-2177, 1987.
-
(1987)
IEEE Trans. Electron Devices
, vol.ED-34
, pp. 2173-2177
-
-
Colinge, J.P.1
-
19
-
-
0026853735
-
Suppression of parasitic bipolar effects in thin-film SO1 transistors
-
G. A. Armstrong and W. D. French, “Suppression of parasitic bipolar effects in thin-film SO1 transistors,” IEEE Electron Device Lett., vol. 13, pp. 198-200, 1992.
-
(1992)
IEEE Electron Device Lett.
, vol.13
, pp. 198-200
-
-
Armstrong, G.A.1
French, W.D.2
|