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Volumn 40, Issue 3, 1993, Pages 583-590

Modeling for Floating Body Effects in Fully Depleted SOI MOSFET’s

Author keywords

[No Author keywords available]

Indexed keywords

SEMICONDUCTOR DEVICE MODELS; SILICON ON INSULATOR TECHNOLOGY; THIN FILM DEVICES;

EID: 0027555541     PISSN: 00189383     EISSN: 15579646     Source Type: Journal    
DOI: 10.1109/16.199364     Document Type: Article
Times cited : (15)

References (19)
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    • Vasudev, P.K.1
  • 2
    • 0024626928 scopus 로고
    • Analysis of conduction in fully depleted SOI MOS-FET’s
    • K. K. Young, “Analysis of conduction in fully depleted SOI MOS-FET’s,” IEEE Trans. Electron Devices, vol.36, pp. 504–506, 1989.
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  • 3
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    • (1990) IEEE Trans. Electron Devices , vol.37 , pp. 1999-2006
    • Woo, J.C.S.1    Terrill, K.W.2    Vasudev, P.K.3
  • 5
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    • Reduction of kink effect in thin-film SOI MOS-FET’s
    • J.P. Colinge, “Reduction of kink effect in thin-film SOI MOS FET’s,” IEEE Electron Device Lett., vol. 9, pp. 97–99, 1988.
    • (1988) IEEE Electron Device Lett. , vol.9 , pp. 97-99
    • Colinge, J.P.1
  • 6
    • 0039147383 scopus 로고
    • Analysis of kink characteristics in silicon-on-insulator MOSFET’s using two-carrier modeling
    • K. Kato, T. Wada, and K. Taniguchi, “Analysis of kink characteristics in silicon-on-insulator MOSFET’s using two-carrier modeling,” IEEE Trans. Electron Devices, vol. ED-32, pp. 458–462, 1985.
    • (1985) IEEE Trans. Electron Devices , vol.ED-32 , pp. 458-462
    • Kato, K.1    Wada, T.2    Taniguchi, K.3
  • 7
    • 0026172212 scopus 로고
    • Analysis and control of floating-body bipolar effects in fully depleted submicrometer SOI MOSFET’s
    • J.Y. Choi and J.G. Fossum, “Analysis and control of floating-body bipolar effects in fully depleted submicrometer SOI MOSFET’s,” IEEE Trans. Electron Devices, vol. 38, pp. 1384–1391, 1991.
    • (1991) IEEE Trans. Electron Devices , vol.38 , pp. 1384-1391
    • Choi, J.Y.1    Fossum, J.G.2
  • 8
    • 0024048586 scopus 로고
    • Two-dimensional numerical analysis of the floating region in SOI MOSFET’s
    • S.P. Edwards, K.J. Yallup, and K.M. De meyer, “Two-dimensional numerical analysis of the floating region in SOI MOSFET’s,” IEEE Trans. Electron Devices, vol. 35, pp. 1012–1020, 1988.
    • (1988) IEEE Trans. Electron Devices , vol.35 , pp. 1012-1020
    • Edwards, S.P.1    Yallup, K.J.2    De meyer, K.M.3
  • 10
    • 0026202127 scopus 로고
    • An analytical model for back-gate effects on ultrathin-film SOI MOSFET’s
    • H. T. Chen and R. S. Huang, “An analytical model for back-gate effects on ultrathin-film SOI MOSFET’s,” IEEE Electron Device Lett., vol. 12, pp. 433–435, 1991.
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    • Chen, H.T.1    Huang, R.S.2
  • 11
    • 0020830319 scopus 로고
    • Threshold voltage of thin-film silicon-on-insulator (SOI) MOSFET’s
    • H. K. Lim and J. G. Fossum, “Threshold voltage of thin-film silicon-on-insulator (SOI) MOSFET’s,” IEEE Trans. Electron Devices, vol. ED-30, pp. 1244–1251, 1983.
    • (1983) IEEE Trans. Electron Devices , vol.ED-30 , pp. 1244-1251
    • Lim, H.K.1    Fossum, J.G.2
  • 12
    • 0021405436 scopus 로고
    • Current-voltage characteristics of thin-film SOI MOSFET’s in strong inversion
    • H. K. Lim and J. G. Fossum, “Current-voltage characteristics of thin-film SOI MOSFET’s in strong inversion,” IEEE Trans. Electron Devices, vol. ED-31, pp. 401–408, 1984.
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  • 16
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  • 18
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  • 19
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    • Suppression of parasitic bipolar effects in thin-film SO1 transistors
    • G. A. Armstrong and W. D. French, “Suppression of parasitic bipolar effects in thin-film SO1 transistors,” IEEE Electron Device Lett., vol. 13, pp. 198-200, 1992.
    • (1992) IEEE Electron Device Lett. , vol.13 , pp. 198-200
    • Armstrong, G.A.1    French, W.D.2


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.