Monte Carlo study of impact ionization phenomena in small geometry MOSFETs

Technical Digest - International Electron Devices Meeting

Volumn , Issue , 1994, Pages 355-358

  Taniguchi, K ^a   Yamaji, M ^a   Sonoda, K ^a   Kunikiyo, T ^a   Hamaguchi, C ^a  

^a OSAKA UNIVERSITY   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

DIFFUSION IN SOLIDS; ELECTRIC FIELDS; IONIZATION OF GASES; MONTE CARLO METHODS; PHYSICAL PROPERTIES; SEMICONDUCTOR DEVICE MODELS; SIMULATION;

DRIFT DIFFUSION MODEL; MULTIVALLEY MONTE CARLO SIMULATOR; NONLOCAL IMPACT IONIZATION COEFFICIENT; TWO DIMENSIONAL MOSFET MODEL;

MOSFET DEVICES;

EID: 0028758551     PISSN: 01631918     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (10)