A Simple Method to Characterize Substrate Current in MOSFET's

IEEE Electron Device Letters

Volumn 5, Issue 12, 1984, Pages 505-507

  Chan, T Y ^a   Ko, P K ^a   Hu, C ^a  

^a UNIVERSITY OF CALIFORNIA   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ELECTRONS; SEMICONDUCTOR DEVICES - MODELING;

SATURATION REGION; SUBSTRATE CURRENT IN MOSFET;

SEMICONDUCTOR DEVICES, MOSFET;

EID: 0021601456     PISSN: 07413106     EISSN: 15580563     Source Type: Journal    
DOI: 10.1109/EDL.1984.26006     Document Type: Article

References (7)

1. C. Hu, “Hot-electron effects in MOSFETs,” in IEDM Tech. Dig., 1983.
2. Y. A. El Mansy and A. R. Boothroyed, “A simple two-dimensional model for IGFET operation in the saturation region,” IEEE Trans. Electron Devices, vol. ED-24, p. 254, Mar. 1977.
3. P. K. Ko, C. Hu, and R. S. Muller, “A unified model for hot-electron currents in MOSFETs,” in IEDM Tech. Dig., 1981, p. 600.
4. S. Tanaka and M. Ishikawa, “One-dimensional writing model of n-channel floating gate-ionization MOS(FIMOS),” IEEE Trans. Electron Devices, vol. ED-28, pp. 1190-1197, 1981.
5. Y. M. Sing and B. Sudlow, “Modeling and VLSI design constraints of substrate current,” in IEDM Tech. Dig., 1980, p. 732.
6. E. Takeda, H. Kume, T. Toyabe, and S. Asai, “Submicrometer MOSFET structure for minimizing hot-carrier generation,” IEEE Trans. Electron Devices, vol. ED-29, p. 611, Apr. 1982.
7. To be published.