Non-local impact ionization in silicon devices

Technical Digest - International Electron Devices Meeting, IEDM

Volumn 1991-January, Issue , 1991, Pages 127-130

  Slotboom, J W ^a   Streutker, G ^a   Van Dort, M J ^a   Woerlee, P H ^a   Pruijmboom, A ^a   Gravesteijn, D J ^a  

^a PHILIPS RESEARCH LABORATORIES   (Netherlands)

Author keywords

Bipolar transistors; Computational modeling; Electrons; Equations; Heating; Impact ionization; Molecular beam epitaxial growth; MOSFETs; Silicon devices; Temperature distribution

Indexed keywords

BIPOLAR TRANSISTORS; ELECTRIC FIELDS; ELECTRON DEVICES; ELECTRON TEMPERATURE; ELECTRONS; EPITAXIAL GROWTH; FIELD EFFECT TRANSISTORS; HEATING; IONIZATION; MOLECULAR BEAM EPITAXY; MOLECULAR BEAMS; MOSFET DEVICES; TEMPERATURE DISTRIBUTION; TRANSISTORS;

COMPUTATIONAL MODEL; EQUATIONS; MOLECULAR BEAM EPITAXIAL GROWTH; MOSFETS; SILICON DEVICES;

IMPACT IONIZATION;

EID: 84954108170     PISSN: 01631918     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/IEDM.1991.235484     Document Type: Conference Paper

References (0)