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Volumn 9, Issue 8, 1988, Pages 399-401

Nonlocality of the Electron Ionization Coefficient in n-MOSFET's: An Analytic Approach

Author keywords

[No Author keywords available]

Indexed keywords

ELECTRONS; MATHEMATICAL STATISTICS -- MONTE CARLO METHODS;

EID: 0024055360     PISSN: 07413106     EISSN: 15580563     Source Type: Journal    
DOI: 10.1109/55.757     Document Type: Article
Times cited : (15)

References (14)
  • 2
    • 0017515186 scopus 로고
    • Computer simulation of gallium arsenide field-effect transistors using Monte Carlo methods
    • July
    • R.A. Warriner, “Computer simulation of gallium arsenide field-effect transistors using Monte Carlo methods,” Solid-State Electron Devices, vol. 1, no. 4, pp. 105–110, July 1977.
    • (1977) Solid-State Electron Devices , vol.1 , Issue.4 , pp. 105-110
    • Warriner, R.A.1
  • 3
    • 0020103264 scopus 로고
    • Current equations for velocity overshoot
    • K.K. Thornber, “Current equations for velocity overshoot,” IEEE Electron Device Lett., vol. EDL-3, no. 3, pp. 69–71, 1982.
    • (1982) IEEE Electron Device Lett. , vol.3 EDL , Issue.3 , pp. 69-71
    • Thornber, K.K.1
  • 4
    • 0023454932 scopus 로고
    • Simplified device equations and transport coefficients for GaAs device modeling
    • Nov.
    • I.C. Kizilyalli and K. Hess, “Simplified device equations and transport coefficients for GaAs device modeling,” IEEE Trans. Electron Devices, vol. ED-34, no. 11, pp. 2352–2354, Nov. 1987.
    • (1987) IEEE Trans. Electron Devices , vol.34 ED , Issue.11 , pp. 2352-2354
    • Kizilyalli, I.C.1    Hess, K.2
  • 5
    • 0004966122 scopus 로고
    • Hot-electron flow in an inhomogeneous field
    • Jan.
    • M. Artaki, “Hot-electron flow in an inhomogeneous field,” Appl. Phys. Lett., vol. 52, no. 2, pp. 141–143, Jan. 1988.
    • (1988) Appl. Phys. Lett. , vol.52 , Issue.2 , pp. 141-143
    • Artaki, M.1
  • 6
    • 0019439005 scopus 로고
    • Application of scaling to problems in high-field electronic transport
    • Jan.
    • K.K. Thornber, “Application of scaling to problems in high-field electronic transport,” J. Appl. Phys., vol. 52, no. 1, pp. 279–290, Jan. 1981.
    • (1981) J. Appl. Phys. , vol.52 , Issue.1 , pp. 279-290
    • Thornber, K.K.1
  • 7
    • 0016619927 scopus 로고
    • Modeling weak avalanche multiplication currents in IGFET's and SOS transistors for CAD
    • Y.A. El Mansy and D.M. Caughey, “Modeling weak avalanche multiplication currents in IGFET's and SOS transistors for CAD,” in IEDM Tech. Dig., 1975, p. 31.
    • (1975) IEDM Tech. Dig. , pp. 31
    • El Mansy, Y.A.1    Caughey, D.M.2
  • 8
    • 0021601456 scopus 로고
    • A simple method to characterize substrate current in MOSFET's
    • Dec.
    • T.Y. Chan, P.K. Ko, and C. Hu, “A simple method to characterize substrate current in MOSFET's,” IEEE Electron Device Lett., vol. EDL-5, no. 12, pp. 505–507, Dec. 1984.
    • (1984) IEEE Electron Device Lett. , vol.5 EDL , Issue.12 , pp. 505-507
    • Chan, T.Y.1    Ko, P.K.2    Hu, C.3
  • 9
    • 0022135706 scopus 로고
    • Dependence of channel electric field on device Scaling
    • Oct.
    • T.Y. Chan, P.K. Ko, and C. Hu, “Dependence of channel electric field on device Scaling,” IEEE Electron Device Lett., vol. EDL-6, no. 10, pp. 551–553, Oct. 1985.
    • (1985) IEEE Electron Device Lett. , vol.6 EDL , Issue.10 , pp. 551-553
    • Chan, T.Y.1    Ko, P.K.2    Hu, C.3
  • 10
    • 36149012386 scopus 로고
    • Ionization rates for electrons and holes in silicon
    • Mar.
    • A.G. Chynoweth, “Ionization rates for electrons and holes in silicon,” Phys. Rev., vol. 109, no. 5, Mar. 1958.
    • (1958) Phys. Rev. , vol.109 , Issue.5
    • Chynoweth, A.G.1
  • 11
    • 0022079956 scopus 로고
    • A novel impact-ionization model for l-μm MOSFET simulation
    • June
    • R. Kuhnert et al., “A novel impact-ionization model for l-����m MOSFET simulation,” IEEE Trans. Electron Devices, vol. ED-32, pp. 1057–1063, June 1985.
    • (1985) IEEE Trans. Electron Devices , vol.32 ED , pp. 1057-1063
    • Kuhnert, R.1
  • 12
    • 0017466066 scopus 로고
    • A simple two-dimensional model for IGFET operation in the saturation region
    • Mar.
    • Y.A. El Mansy and A.R. Boothroyd, “A simple two-dimensional model for IGFET operation in the saturation region,” IEEE Trans. Electron Devices, vol. ED-24, pp. 254–262, Mar. 1977.
    • (1977) IEEE Trans. Electron Devices , vol.24 ED , pp. 254-262
    • El Mansy, Y.A.1    Boothroyd, A.R.2
  • 13
    • 0020826266 scopus 로고
    • Impact ionization of electrons in silicon (steady state)
    • Sept.
    • J.Y. Tang and K. Hess, “Impact ionization of electrons in silicon (steady state),” J. Appl. Phys., vol. 54, no. 9, pp. 5139–5144, Sept. 1983.
    • (1983) J. Appl. Phys. , vol.54 , Issue.9 , pp. 5139-5144
    • Tang, J.Y.1    Hess, K.2


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.