A Physical Model of Floating Body Thin Film Silicon-On-Insulator nMOSFET with Parasitic Bipolar Transistor

IEEE Transactions on Electron Devices

Volumn 41, Issue 5, 1994, Pages 726-733

  Kim, Choong Ki ^b   Kang, Sang Won ^a  

^a Electronics and Telecommunications Research Institute (ETRI)   (South Korea)

^b Department of Electrical Engineering Advanced Institute of Science and Technology ^*  (Taiwan)

Author keywords

[No Author keywords available]

Indexed keywords

BIPOLAR TRANSISTORS; CORRELATION METHODS; ELECTRIC BREAKDOWN; ELECTRIC CURRENTS; ELECTRIC PROPERTIES; GEOMETRY; SEMICONDUCTOR DEVICE MODELS; SEMICONDUCTOR DEVICE STRUCTURES; SILICON ON INSULATOR TECHNOLOGY; THIN FILMS;

BIPOLAR JUNCTION TRANSISTORS; BODY POTENTIAL; FLOATING BODY; KINK EFFECT; PARASITIC CURRENT; THRESHOLD VOLTAGE REDUCTION;

MOSFET DEVICES;

EID: 0028427017     PISSN: 00189383     EISSN: 15579646     Source Type: Journal    
DOI: 10.1109/16.285024     Document Type: Article

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