Dry and wet etching for group III - Nitrides

MRS Internet Journal of Nitride Semiconductor Research

Volumn 4, Issue SUPPL. 1, 1999, Pages

  Adesida, I ^a   Youtsey, C ^a   Ping, A T ^a   Khan, F ^a   Romano, L T ^b   Bulman, G ^c  

^a University of Illinois at Urbana Champaign   (United States)

^b PALO ALTO RESEARCH CENTER   (United States)

^c Arkansas Power Electronics International Inc   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ANISOTROPY; FIELD EFFECT TRANSISTORS; HETEROJUNCTION BIPOLAR TRANSISTORS; LIGHT EMITTING DIODES; MICROWAVE DEVICES; NITRIDES; PLASMA ETCHING; REACTIVE ION ETCHING; SEMICONDUCTOR LASERS; SEMICONDUCTOR MATERIALS; TRANSISTORS;

BONDING ENERGIES; MICROWAVE TRANSISTORS; PHOTOELECTROCHEMICAL ETCHING; WET ETCHING;

DRY ETCHING;

EID: 0003212649     PISSN: 10925783     EISSN: None     Source Type: Journal    
DOI: 10.1557/s1092578300002222     Document Type: Conference Paper

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