Highly anisotropic, ultra-smooth patterning of GaN/SiC by low energy electron enhanced etching in DC plasma

Journal of Electronic Materials

Volumn 26, Issue 3, 1997, Pages 301-305

  Gillis, H P ^a,c   Choutov, D A ^a   Martin, K P ^a   Bremser, M D ^b   Davis, R F ^b  

^a GEORGIA INSTITUTE OF TECHNOLOGY   (United States)

^b North Carolina State University   (United States)

^c UNIVERSITY OF CALIFORNIA   (United States)

Author keywords

Etching; GaN; Low energy electron; Low energy electron enhanced etching (LE4); SiC

Indexed keywords

EID: 0000131526     PISSN: 03615235     EISSN: None     Source Type: Journal    
DOI: 10.1007/s11664-997-0168-7     Document Type: Article

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