Selective inductively coupled plasma etching of group-III nitrides in Cl2- And BCl3-based plasmas

Journal of Vacuum Science and Technology A: Vacuum, Surfaces and Films

Volumn 16, Issue 3, 1998, Pages 1621-1626

  Shul, R J ^a   Willison, C G ^a   Bridges, M M ^a   Han, J ^a   Lee, J W ^b   Pearton, S J ^b   Abernathy, C R ^b   MacKenzie, J D ^b   Donovan, S M ^b   Zhang, L ^c   Lester, L F ^c  

^a SANDIA NATIONAL LABORATORIES   (United States)

^b University of Florida   (United States)

^c University of New Mexico   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ALN; ETCH MECHANISM; ETCH PROCESS; ETCH RATES; ETCH SELECTIVITY; FOUR-ORDER; GROUP III NITRIDES; HIGH DENSITY PLASMAS; HIGH SELECTIVITY; HIGH TEMPERATURE ELECTRONIC DEVICES; HIGH-POWER; ICP ETCH; ION BOMBARDMENT ENERGY; ION FLUXES; PATTERNING TECHNIQUES; PLASMA CHEMISTRIES; REACTIVE ION ETCH;

GALLIUM ALLOYS; GALLIUM NITRIDE; INDUCTIVELY COUPLED PLASMA; ION BOMBARDMENT; IONS; PLASMA ETCHING;

REACTIVE ION ETCHING;

EID: 0001448639     PISSN: 07342101     EISSN: None     Source Type: Journal    
DOI: 10.1116/1.581130     Document Type: Article

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