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Volumn 16, Issue 3, 1998, Pages 1478-1482
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Etch characteristics of GaN using inductively coupled Cl2/Ar and Cl2/BCl3 plasmas
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Author keywords
[No Author keywords available]
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Indexed keywords
ANGLE-RESOLVED XPS;
ETCH PARAMETERS;
ETCH PROCESS;
ETCH PROFILE;
ETCH PROPERTIES;
ETCH RATES;
INDUCTIVELY-COUPLED;
OPERATION PRESSURE;
RADICAL DENSITIES;
SURFACE RESIDUES;
ARGON;
EMISSION SPECTROSCOPY;
GALLIUM ALLOYS;
GALLIUM NITRIDE;
GRAFTING (CHEMICAL);
INDUCTIVELY COUPLED PLASMA;
LEAKAGE (FLUID);
LIGHT EMISSION;
OPTICAL EMISSION SPECTROSCOPY;
PHOTORESISTS;
SILICON COMPOUNDS;
SYNTHESIS (CHEMICAL);
X RAY PHOTOELECTRON SPECTROSCOPY;
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EID: 0001068033
PISSN: 07342101
EISSN: None
Source Type: Journal
DOI: 10.1116/1.581173 Document Type: Article |
Times cited : (60)
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References (12)
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