메뉴 건너뛰기




Volumn 16, Issue 3, 1998, Pages 1478-1482

Etch characteristics of GaN using inductively coupled Cl2/Ar and Cl2/BCl3 plasmas

Author keywords

[No Author keywords available]

Indexed keywords

ANGLE-RESOLVED XPS; ETCH PARAMETERS; ETCH PROCESS; ETCH PROFILE; ETCH PROPERTIES; ETCH RATES; INDUCTIVELY-COUPLED; OPERATION PRESSURE; RADICAL DENSITIES; SURFACE RESIDUES;

EID: 0001068033     PISSN: 07342101     EISSN: None     Source Type: Journal    
DOI: 10.1116/1.581173     Document Type: Article
Times cited : (60)

References (12)


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.