The effects of reactive ion etching-induced damage on the characteristics of ohmic contacts to n-type GaN

Journal of Electronic Materials

Volumn 27, Issue 4, 1998, Pages 261-265

  Ping, A T ^a   Chen, Q ^b   Yang, J W ^b,c   Asif Khan, M ^b,c   Adesida, I ^a  

^a United States of America   (United States)

^b APA Optronics   (United States)

^c The Department of Mechanical Engineering   (United States)

Author keywords

GaN; Ohmic contacts; Reactive ion etching (RIE)

Indexed keywords

EID: 3843058900     PISSN: 03615235     EISSN: None     Source Type: Journal    
DOI: 10.1007/s11664-998-0397-4     Document Type: Article

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