Characterization of reactive ion etching-induced damage to n-GaN surfaces using schottky diodes

Journal of Electronic Materials

Volumn 26, Issue 3, 1997, Pages 266-271

  Ping, A T ^a   Schmitz, A C ^a   Adesida, I ^a   Asif Khan, M ^b   Chen, Q ^b   Yang, J W ^b  

^a University of Illinois at Urbana Champaign   (United States)

^b APA Optronics   (United States)

Author keywords

GaN; Reactive ion etching; Schottky diode

Indexed keywords

EID: 3943098679     PISSN: 03615235     EISSN: None     Source Type: Journal    
DOI: 10.1007/s11664-997-0162-0     Document Type: Article

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