Dry etching of GaN using reactive ion beam etching and chemically assisted reactive ion beam etching

Materials Research Society Symposium - Proceedings

Volumn 468, Issue , 1997, Pages 373-377

  Lee, J W ^a   Park, H S ^a   Park, Y J ^a   Yoo, M C ^a   Kim, T I ^a   Kim, H S ^a   Yeom, G Y ^a  

^a Samsung Advanced Institute of Technology (SAIT)   (South Korea)

Author keywords

[No Author keywords available]

Indexed keywords

DRY ETCHING; ION BEAMS; MASKS; NITRIDES; PHOTORESISTS;

GAS CHEMISTRY; SUBSTRATE TEMPERATURE;

SEMICONDUCTING GALLIUM COMPOUNDS;

EID: 0030658516     PISSN: 02729172     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1557/proc-468-373     Document Type: Conference Paper

References (7)