Tunneling through ultrathin SiO2 gate oxides from microscopic models

Journal of Applied Physics

Volumn 89, Issue 1, 2001, Pages 348-363

  Stadele M ^a   Tuttle, B R ^b   Hess, K ^a  

^a UNIVERSITY OF ILLINOIS AT URBANA CHAMPAIGN   (United States)

^b BEHREND COLLEGE   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 0000722083     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1330764     Document Type: Article

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