Analysis of tunnel current through ultrathin gate oxides

Japanese Journal of Applied Physics, Part 2: Letters

Volumn 37, Issue 12 SUPPL. B, 1998, Pages

  Fukuda, Masatoshi ^a   Mizubayashi, Wataru ^a   Kohno, Atsushi ^a   Miyazaki, Seiichi ^a   Hirose, Masataka ^a  

^a HIROSHIMA UNIVERSITY   (Japan)

Author keywords

Direct tunneling; Fowler Nordheim tunneling; Gate oxide; Tunnel current

Indexed keywords

BAND STRUCTURE; COMPUTATIONAL METHODS; ELECTRIC CURRENT MEASUREMENT; ELECTRON SCATTERING; ELECTRON TUNNELING; ELLIPSOMETRY; HETEROJUNCTIONS; OXIDES; SEMICONDUCTING SILICON; SEMICONDUCTING SILICON COMPOUNDS; SILICA;

FOWLER-NORDHEIM TUNNELING; MULTIPLE-SCATTERING THEORY; TUNNEL CURRENTS;

GATES (TRANSISTOR);

EID: 0032304463     PISSN: 00214922     EISSN: None     Source Type: Journal    
DOI: 10.1143/jjap.37.l1534     Document Type: Article

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