Image force effects and the dielectric response of SiO2 in electron transport across metal-oxide-semiconductor structures

Journal of Vacuum Science and Technology A: Vacuum, Surfaces and Films

Volumn 15, Issue 3, 1997, Pages 784-789

  Wen, H J ^a   Ludeke, R ^a   Newns, D M ^a   Lo, S H ^a  

^a IBM T J WATSON RESEARCH CENTER   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 0000830564     PISSN: 07342101     EISSN: None     Source Type: Journal    
DOI: 10.1116/1.580708     Document Type: Article

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