Modeling and simulation of tunneling through ultra-thin gate dielectrics

Journal of Applied Physics

Volumn 81, Issue 12, 1997, Pages 7900-7908

  Schenk, Andreas ^a   Heiser, Gernot ^b  

^a ETH ZURICH   (Switzerland)

^b UNIVERSITY OF NEW SOUTH WALES   (Australia)

Author keywords

[No Author keywords available]

Indexed keywords

FOWLER-NORDHEIM TUNNELING; PSEUDOBARRIER METHOD; TRANSMISSION COEFFICIENT; ULTRA THIN GATE OXIDES;

APPROXIMATION THEORY; COMPUTER SIMULATION; DIELECTRIC MATERIALS; ELECTRIC CURRENTS; ELECTRON TUNNELING; ELECTRONS; MATHEMATICAL MODELS;

MOSFET DEVICES;

EID: 0031162957     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.365364     Document Type: Article

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