Study of direct tunneling through ultrathin gate oxide of field effect transistors using Monte Carlo simulation

Journal of Applied Physics

Volumn 86, Issue 7, 1999, Pages 3804-3811

  Cassan, E ^a   Galdin, S ^a   Dollfus, P ^a   Hesto, P ^a  

^a UNIV PARIS SUD   (France)

Author keywords

[No Author keywords available]

Indexed keywords

COMPUTER SIMULATION; GATES (TRANSISTOR); MATRIX ALGEBRA; MONTE CARLO METHODS; PARTIAL DIFFERENTIAL EQUATIONS; SEMICONDUCTING SILICON; SEMICONDUCTING SILICON COMPOUNDS; SEMICONDUCTOR DEVICE MODELS; SILICA;

ULTRATHIN GATE OXIDES;

MOSFET DEVICES;

EID: 0032614408     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.371291     Document Type: Article

References (30)

1. H. S. Momose, M. Ono, T. Ohguro, S. Nakamura, and H. Iwai, IEEE Trans. Electron Devices ED-43, 1233 (1996).
2. H. S. Momose, M. Ono, T. Yoshitomi, T. Ohguro, S.-I. Nakamura, M. Saito, and H. Iwai, Solid-State Electron. 41, 707 (1997).
3. H. S. Momose, S.-I. Nakamura, T. Ohguro, T. Yoshitomi, E. Morifuji, T. Morimoto, Y. Katsumata, and H. Iwai, IEEE Trans. Electron Devices ED-45, 691 (1998).
4. A. Schenk and G. Heiser, J. Appl. Phys. 81, 7900 (1997).
5. H. Y. Yang, H. Niimi, and G. Lucovsky, J. Appl. Phys. 83, 2327 (1998).
6. W.-K. Shih, E. X. Wang, S. Jallepalli, F. Leon, C. M. Maziar, and A. F. Taschjr, Solid-State Electron. 42, 997 (1998).
7. S.-H. Lo, A. Buchanan, Y. Taur, and W. Wang, IEEE Electron Device Lett. 18, 209 (1997).
8. A. Wettstein, A. Schenk, A. Scholze, and W. Fichtner, in Proceedings of the International Conference on Simulation of Semiconductor Processes and Devices, (SISPAD'97), IEEE Cat. no. 97TH8254 (New York, 1997), p. 101.
9. J. Sune, P. Olivo, and B. Ricco, J. Appl. Phys. 70, 337 (1991).
10. W.-W. Liu and M. Fukuma, J. Appl. Phys. 60, 1555 (1986).
11. Y. Ando and T. Itoh, J. Appl. Phys. 61, 1497 (1987).
12. Z. A. Weinberg, Solid-State Electron. 20, 11 (1977).
13. Z. A. Weinberg, J. Appl. Phys. 53, 5052 (1982).
14. Z. A. Weinberg and A. Harstein, J. Appl. Phys. 54, 2517 (1983).
15. K. M. Chu and D. L. Pulfrey, IEEE Trans. Electron. Devices ED-35, 1656 (1988).
16. M. V. Fischetti, S. E. Laux, and E. Crabbé, J. Appl. Phys. 78, 1058 (1995).
17. J. Singh, in Physics of Semiconductors and their Heterostructures (McGraw-Hill, New York, 1993), p. 550.
18. M. V. Fischetti and S. E. Laux, Phys. Rev. B 38, 9721 (1988).
19. M. Hermann and A. Schenk, J. Appl. Phys. 77, 4522 (1995).
20. A. I. Chou, K. Lai, K. Kumar, P. Chwdhury, and J. C. Lee, Appl. Phys. Lett. 70, 3407 (1997).
21. H. J. Wen and R. Ludeke, J. Vac. Sci. Technol. B 16, 2296 (1998).
22. P. Dollfus, J. Appl. Phys. 82, 3911 (1997).
23. K. J. Hebert and E. A. Irene, J. Appl. Phys. 82, 291 (1997).
24. C. Huang, T. Wang, C. N. Chen, M. C. Chang, and J. Fu, IEEE Trans. Electron Devices ED-39, 2562 (1992).
25. C. Fiegna and E. Sangiorgi, IEEE Trans. Electron Devices ED-40, 619 (1993).
26. C. Fiegna, E. Sangiorgi, and L. Selmi, IEEE Trans. Electron Devices ED-40, 2018 (1993).
27. G. Jin, R. W. Dutton, Y.-J. Park, and H.-S. Min, J. Appl. Phys. 78, 3174 (1995).
28. M. Depas, B. Vermeire, and M. M. Heyns, J. Appl. Phys. 80, 382 (1996).
29. M. Depas, T. Nigam, and M. M. Heyns, IEEE Trans. Electron Devices ED-43, 1499 (1996).
30. M. Depas, T. Nigam, and M. M. Heyns, Solid-State Electron. 41, 725 (1997).