Wet-Chemical Conditioning of Silicon Substrates for a-Si:H/c-Si Heterojunctions

Engineering Materials

Volumn , Issue , 2012, Pages 45-94

  Angermann, Heike ^a   Rappich, Jörg ^a  

^a HAHN MEITNER INSTITUT   (Germany)

Author keywords

Anisotropic Etching; Damage Etch; Heterojunction Solar Cell; Interface State Density; Solar Cell

Indexed keywords

AMORPHOUS SILICON; ATOMIC FORCE MICROSCOPY; CHEMICAL STABILITY; CONVERSION EFFICIENCY; FOURIER TRANSFORM INFRARED SPECTROSCOPY; HETEROJUNCTIONS; INTERFACES (MATERIALS); MORPHOLOGY; NANORODS; PASSIVATION; PLASMA ENHANCED CHEMICAL VAPOR DEPOSITION; SCANNING ELECTRON MICROSCOPY; SILICON SOLAR CELLS; SPECTROSCOPIC ELLIPSOMETRY; SUBSTRATES; SURFACE MORPHOLOGY; SURFACE ROUGHNESS; WIDE BAND GAP SEMICONDUCTORS; ZINC OXIDE;

A-SIC:H; CHEMICAL CONDITIONING; CHEMICAL SURFACES; CRYSTALLINE SI; DAMAGE ETCH; HETEROJUNCTION SOLAR CELLS; INTERFACE STATE DENSITY; SILICON SUBSTRATES; SUBSTRATE PRETREATMENT; WET CHEMICALS;

II-VI SEMICONDUCTORS;

EID: 85126686656     PISSN: 16121317     EISSN: 18681212     Source Type: Book Series    
DOI: 10.1007/978-3-642-22275-7_3     Document Type: Chapter

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