Recombination behaviour at the ultrathin polypyrrole film/silicon interface investigated by in-situ pulsed photoluminescence

Japanese Journal of Applied Physics

Volumn 47, Issue 1 PART 2, 2008, Pages 554-557

  Intelmann, Carl Matthias ^a,b,c   Hinrichs, Karsten ^a,b,c   Syritski, Vitali ^a,b,c   Yang, Florent ^a,b,c   Rapptch, Jörg ^a,b,c  

^a HAHN MEITNER INSTITUT   (Germany)

^b ISAS INSTITUTE FOR ANALYTICAL SCIENCES   (Germany)

^c TALLINN UNIVERSITY OF TECHNOLOGY   (Estonia)

Author keywords

In situ techniques; Infrared spectroscopic ellipsometry; Interface; Passivation; Photoluminescence; Polypyrrole; Pulsed electrodeposition; Silicon

Indexed keywords

ACIDS; ELLIPSOMETRY; LIGHT EMISSION; LUMINESCENCE; PASSIVATION; PHOTOLUMINESCENCE; QUENCHING; SILICON; SILICON COMPOUNDS; SPECTROSCOPIC ELLIPSOMETRY; SPONTANEOUS EMISSION; ULTRATHIN FILMS;

ACIDIC SOLUTIONS; AQUEOUS ELECTROLYTES; IN-SITU; IN-SITU TECHNIQUES; INFRARED SPECTROSCOPIC ELLIPSOMETRIES; INFRARED SPECTROSCOPIC ELLIPSOMETRY; INTERFACE; PL MEASUREMENTS; POTENTIAL PULSES; PULSED ELECTRODEPOSITION; SI SURFACES;

POLYPYRROLES;

EID: 54249110557     PISSN: 00214922     EISSN: 13474065     Source Type: Journal    
DOI: 10.1143/JJAP.47.554     Document Type: Article

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