Passivation of Si surfaces by hydrogen and organic molecules investigated by in-situ photoluminescence technique

Physica Status Solidi (C) Current Topics in Solid State Physics

Volumn 7, Issue 2, 2010, Pages 210-213

  Rappich, Joerg ^a   Zhang, Xin ^a   Chapel, Sébastien ^a,b   Sun, Guoguang ^c   Hinrichs, Karsten ^c  

^a HAHN MEITNER INSTITUT   (Germany)

^b ECOLE POLYTECHNIQUE   (France)

^c ISAS INSTITUTE FOR ANALYTICAL SCIENCES   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

AQUEOUS SOLUTIONS; ELECTROCHEMICAL GRAFTING; GRAFTING PROCESS; H-TERMINATED SI SURFACES; IN-SITU; IR SPECTRUM; ORGANIC MOLECULES; OXIDE LAYER; PL INTENSITY; RECOMBINATION LOSS; SI SURFACES; STRONG ENHANCEMENT; SURFACE RECOMBINATIONS; VIBRATIONAL MODES; WET-CHEMICAL ETCH;

ACETONITRILE; MOLECULES; NANOSCIENCE; PASSIVATION; PHOTOLUMINESCENCE; SILICON; SURFACE DEFECTS;

GRAFTING (CHEMICAL);

EID: 77954328437     PISSN: 18626351     EISSN: 16101642     Source Type: Journal    
DOI: 10.1002/pssc.200982438     Document Type: Conference Paper

References (29)

1. W. Kern, Semicond. Internat. 94 (1984).
2. J. Ruzyllo, A. M. Hoff, D. C. Frystak, and S. D. Hossain, J. Electrochem. Soc. 136, 1474 (1989).
3. T. Takahagi, I. Nagai, A. Ishitari, H. Kuroda, and Y. Nagasawa, J. Appl. Phys. 64, 3516 (1988).
4. J. Falta, D. Bahr, G. Materlik, B. H. Muller, and M. Horn von Hoegen, Appl. Phys. Lett. 68, 1394 (1996).
5. W. M. Chen, I. A. Buyanova, A. Henry, W. X. Ni, G. V. Hansson, and B. Monemar, Appl. Phys. Lett. 68, 1256 (1996).
6. T. Fujino, T. Fuse, J.-T. Ryu, K. Inudzuka, T. Nakano, K. Goto, Y. Yamazaki, M. Katayama, and K. Oura, Thin Solid Films 369, 25 (2000).
7. G. Hollinger, S. J. Sferco, and M. Lannoo, Phys. Rev. B 37, 7149 (1988).
8. D. J. DiMaria and J. H. Stathis, Appl. Phys. Lett. 70, 2708 (1997).
9. N. Watanabe, Y. Teramoto, A. Omura, H. Nohira, and T. Hattori, Appl. Surf. Sci. 166, 460 (2000).
10. G. S. Higashi, Y. J. Chabal, G. W. Trucks, and K. Raghavachari, App. Phys. Lett. 56, 656 (1990).
11. Y. J. Chabal, Phys. Rev. Lett. 50, 1850 (1983).
12. K. Itaya, R. Suguwara, Y. Morita, and H. Tokumoto, Appl. Phys. Lett. 60, 2534 (1992).
13. P. Jakob and Y. Chabal, J. Chem. Phys. 95, 2897 (1991).
14. K. Hinrichs, M. Gensch, A. Röseler, and N. Esser, J. Phys.: Condens. Matter. 16, 4335 (2004).
15. P. Hartig, T. Dittrich, and J. Rappich, J. Electroanal. Chem. 524/525, 120 (2002).
16. J. Rappich, P. Hartig, N. H. Nickel, I. Sieber, S. Schulze, and Th. Dittrich, Microelectron. Eng. 80, 62 (2005).
17. H. Sirringhaus, P. J. Brown, R. H. Friend, M. M. Nielsen, K. Bechgaard, B. M. W. Langeveld-Voss, A. J. H. Spiering, R. A. J. Janssen, E. W. Meijer, P. Herwig, and D. M. d. Leeuw, Nature 401, 685 (1999).
18. T. Strother, R. J. Hamers, and L. M. Smith, Nucl. Acids. Res. 28, 3535 (2000).
19. P. Hartig, J. Rappich, and T. Dittrich, Appl. Phys. Lett. 80, 67 (2002).
20. J. Rappich, V. Y. Timoshenko, and T. Dittrich, J. Electrochem. Soc. 144, 493 (1997).
21. V. Y. Timoshenko, A. B. Petrenko, M. N. Stolyarov, T. Dittrich, W. Fuessel, and J. Rappich, J. Appl. Phys. 85, 4171 (1999).
22. F. Yang, K. Roodenko, K. Hinrichs, and J. Rappich, J. Micromech. Microeng. 17, S56 (2007).
23. G. Higashi, R. Becker, Y. Chabal, and A. Becker, Appl. Phys. Lett. 58, 1656 (1991).
24. P. Allongue, C. H. d. Villeneuve, J. Pinson, F. Ozanam, J. N. Chazalviel, and X. Wallart, Electrochim. Acta 43, 2791 (1998).
25. A. Fidélis, F. Ozanam, and J.-N. Chazalviel, Surf. Sci. 444, L7 (2000).
26. W. Royea, A. Juang, and N. Lewis, Appl. Phys. Lett. 77, 1988 (2000).
27. K. Roodenko, J. Rappich, M. Gensch, N. Esser, and K. Hinrichs, Appl. Phys. A - Mater. Sci. Proc. 90, 175 (2008).
28. J. Rappich, A. Merson, K. Roodenko, T. Dittrich, M. Gensch, K. Hinrichs, and Y. Shapira, J. Phys. Chem. B 110, 1332 (2006).
29. K. Hinrichs, A. Röseler, K. Roodenko, and J. Rappich, Appl. Spectrosc. 62, 121 (2008).