Passivation of Si surfaces investigated by in-situ photoluminescence techniques

Solid State Phenomena

Volumn 156-158, Issue , 2009, Pages 363-368

  Rappich, J ^a   Zhang, X ^a   Rosu, D M ^b   Schade, U ^a   Hinrichs, K ^b  

^a HAHN MEITNER INSTITUT   (Germany)

^b ISAS INSTITUTE FOR ANALYTICAL SCIENCES   (Germany)

Author keywords

Electrochemistry; Hydrogen termination; In situ; Mapping; Organic molecules; Oxide etching; Photoluminescence

Indexed keywords

ELECTROCHEMISTRY; ETCHING; HYDROFLUORIC ACID; MAPPING; MOLECULES; PASSIVATION; PHOTOLUMINESCENCE; SEMICONDUCTOR DEVICE MANUFACTURE; SILICON; SPECTROSCOPIC ELLIPSOMETRY;

DEFECT FORMATION; ELECTROCHEMICAL TREATMENTS; ETCHING SOLUTIONS; H-TERMINATED SI SURFACES; H-TERMINATED SURFACE; HF SOLUTIONS; HYDROGEN TERMINATION; IN-SITU; INFRARED SPECTROSCOPIC ELLIPSOMETRY; NEGATIVE BIAS; NITROGEN PURGING; ORGANIC MOLECULES; OXIDE ETCHING; PL MEASUREMENTS; RECOMBINATION LOSS; SI SURFACES; SURFACE MAPPING; SURFACE PASSIVATION; SURFACE RECOMBINATIONS; TIME WINDOWS;

SURFACE DEFECTS; SILICON;

EID: 75849155823     PISSN: 10120394     EISSN: None     Source Type: Book Series    
DOI: 10.4028/www.scientific.net/SSP.156-158.363     Document Type: Conference Paper

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